Negative differential resistance in GaN nanocrystals above room temperature

Chitara, Basant and Jebakumar, DS Ivan and Rao, CNR and Krupanidhi, SB (2009) Negative differential resistance in GaN nanocrystals above room temperature. In: Nanotechnology, 20 (40). pp. 1-4.

PDF fulltext.pdf - Published Version Restricted to Registered users only Download (406kB) | Request a copy

Abstract

Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is similar to 7 V above room temperature.

Item Type:	Journal Article
Publication:	Nanotechnology
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	06 Jan 2010 10:41
Last Modified:	19 Sep 2010 05:49
URI:	http://eprints.iisc.ac.in/id/eprint/24208

Actions (login required)

View Item