Suresh, BS and Padma, DK (1985) Decomposition of silane on solid P4O10. In: Polyhedron, 4 (12). 2067 -2068.
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Abstract
Silane undergoes thermal decomposition on the surface of “phosphorus pentoxide” ( P4O10) into its elements around 200–400°C. The hydrogen formed partially reduces the P4O10 forming lower oxides of phosphorus and water. Elemental silicon is precipitated as reddish-brown solid, which is separated by dissolving out the phosphorus oxides. Silica and disiloxane are not formed in the reaction.
| Item Type: | Journal Article |
|---|---|
| Publication: | Polyhedron |
| Publisher: | Elsevier Science |
| Additional Information: | Copyright of this article belongs to Elsevier Science. |
| Department/Centre: | Division of Chemical Sciences > Inorganic & Physical Chemistry |
| Date Deposited: | 27 Jan 2010 06:05 |
| Last Modified: | 19 Sep 2010 05:44 |
| URI: | http://eprints.iisc.ac.in/id/eprint/23127 |
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