Structural origin of set-reset processes in Ge15Te83Si2 glass investigated using in situ Raman scattering and transmission electron microscopy

Anbarasu, M and Asokan, S and Prusty, Sudakshina and Sood, AK (2009) Structural origin of set-reset processes in Ge15Te83Si2 glass investigated using in situ Raman scattering and transmission electron microscopy. In: Journal Of Applied Physics, 105 (8).

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Abstract

We report here that the structural origin of an easily reversible Ge15Te83Si2 glass can be a promising candidate for phase change random access memories. In situ Raman scattering studies on Ge15Te83Si2 sample, undertaken during the amorphous set and reset processes, indicate that the degree of disorder in the glass is reduced from off to set state. It is also found that the local structure of the sample under reset condition is similar to that in the amorphous off state. Electron microscopic studies on switched samples indicate the formation of nanometric sized particles of c-SiTe2 structure. ©2009 American Institute of Physics

Item Type:	Journal Article
Publication:	Journal Of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyrights of this article belongs to American Institute of Physics.
Keywords:	Germanium Alloys; Glass Structure; Metallic Glasses; Phase Change Materials; Phase Change Memories; Raman Spectra; Silicon Alloys; Solid-State Phase Transformations; Tellurium Alloys; Transmission Electron Microscopy; X-Ray Diffraction
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	29 Dec 2009 09:11
Last Modified:	19 Sep 2010 05:40
URI:	http://eprints.iisc.ac.in/id/eprint/22077

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