Kumar, V and Indusekhar, H (1983) New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductors. In: Electronics Letters, 19 (7). pp. 271-272.
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A new method is suggested where the thermal activation energy is measured directly and not as a slope of an Arrhenius plot. The sample temperature T is allowed to fluctuate about a temperature T0. The reverse-biased sample diode is repeatedly pulsed towards zero bias and the transient capacitance C1 at time t1 is measured The activation energy is obtained by monitoring the fluctuations in C1 and T. The method has been used to measure the activation energy of the gold acceptor level in silicon.
| Item Type: | Journal Article |
|---|---|
| Publication: | Electronics Letters |
| Publisher: | The Institution of Electrical Engineers. |
| Additional Information: | Copyright of this article belongs to The Institution of Electrical Engineers. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 06 Feb 2010 06:25 |
| Last Modified: | 06 Feb 2010 06:25 |
| URI: | http://eprints.iisc.ac.in/id/eprint/20865 |
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