Anisotropic electrical transport property in $La_{4}BaCu_{5}O_{13+{\delta}}$ and $La_{4}BaCu_{4}NiO_{13+{\delta}}$ epitaxial thin films

Venimadhav, A and Herle, P Subramanya and Vedawyas, M and Shivakumara, C and Hegde, MS (1999) Anisotropic electrical transport property in $La_{4}BaCu_{5}O_{13+{\delta}}$ and $La_{4}BaCu_{4}NiO_{13+{\delta}}$ epitaxial thin films. In: Applied Physics Letters, 75 (11). pp. 1598-1600.

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Abstract

Epitaxial films of La4BaCu5O13+delta and La4BaCu4NiO13+delta oxides are grown with a-b plane parallel to (100) of LaAlO3 and SrTiO3 by pulsed-laser deposition. The conductivity measurements performed along the c direction using LaNiO3 as the electrode show metallic behavior whereas they show semiconducting behavior in the a-b plane. Anisotropic transport property of these thin films is explained on the basis of nearly 180 degrees connected Cu-O-Cu chains with an average Cu-O distance of 1.94 Angstrom along the c direction and nearly 180 degrees and 90 degrees connected Cu-O-Cu chains in the a-b plane with short and long Cu-O distances ranging from 1.863 to 2.303 Angstrom. YBa2Cu3O7-x has been grown along (00l) on La4BaCu5O13+delta and shows a T-c of 88 K. (C) 1999 American Institute of Physics. [S0003-6951(99)04937-2].

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	06 Mar 2009 10:20
Last Modified:	19 Sep 2010 04:59
URI:	http://eprints.iisc.ac.in/id/eprint/17954

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