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The coupled effect of size, strain rate and temperature on the shape memory of a pentagonal Cu nanowire

Sutrakar, Vijay Kumar and Mahapatra, Roy D (2009) The coupled effect of size, strain rate and temperature on the shape memory of a pentagonal Cu nanowire. In: Nanotechnology, 20 . 045701-1-045701-10.

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/20/4/0457...

Abstract

A body-centered pentagonal nanobridge structure with lattice constants c = 2.35 and a = 2.53 Å has been observed under high strain rate tensile loading on an initially constrained \langle 100\rangle \mbox {/} \{100\} Cu nanowire at various temperatures. Extensive molecular dynamics (MD) simulations have been performed using the embedded atom method (EAM) for cross-sectional dimensions ranging from 0.723 × 0.723 to 2.169 × 2.169 nm2, temperature ranging from 10 to 600 K, and strain rates of 109–107 s−1. Formations of such pentagonal nanowire are observed for a temperature range 200–600 K for particular cross-sectional dimensions and strain rates. A large inelastic deformation of ~50% is obtained under both isothermal loading and adiabatic loading. With very high degree of repeatability of such pentagonal nanowire formation, the present findings indicate that the interesting stability property and high strength of elongated nanowires have various potential applications in nanomechanical and nanoelectronic devices. Further, we demonstrate a novel thermomechanical unloading mechanism by which it is possible to impart recovery from a pentagonal nanowire following a hysteresis loop: \langle 100\rangle \mbox {/}\{100\}\to \mathrm {pentagonal}\to \langle 110\rangle \mbox {/}\{111\}\to \langle 100\rangle \mbox {/} \{100\} .

Item Type: Journal Article
Publication: Nanotechnology
Publisher: Institute of Physics
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Mechanical Sciences > Aerospace Engineering(Formerly Aeronautical Engineering)
Date Deposited: 30 May 2009 05:52
Last Modified: 19 Sep 2010 04:53
URI: http://eprints.iisc.ac.in/id/eprint/16636

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