Raman spectroscopy of graphene on different substrates and influence of defects

Das, Anindya and Chakraborty, Biswanath and Sood, AK (2008) Raman spectroscopy of graphene on different substrates and influence of defects. In: Bulletin of Materials Science, 31 (3). pp. 579-584.

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Abstract

We show the evolution of Raman spectra with a number of graphene layers on different substrates, $SiO_2/Si$ and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift up to $12 cm^{-1}$ depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by $\sim 6cm^{-1}$ and the 2D band frequency by $\sim 20cm^{-1}$. This red-shift of the G and 2D bands is observed for the first time in single layer graphene.

Item Type:	Journal Article
Publication:	Bulletin of Materials Science
Publisher:	Indian Academy of Sciences
Additional Information:	Copyright of this article belongs to Indian Academy of Sciences.
Keywords:	Graphene;Raman spectroscopy;nano-carbon;phonons.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	10 Oct 2008 10:28
Last Modified:	19 Sep 2010 04:50
URI:	http://eprints.iisc.ac.in/id/eprint/16025

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