Field-tunable magnetic phases in a semiconductor-based two-dimensional Kondo lattice

Siegert, C and Ghosh, A and Pepper, M and Farrer, I and Ritchie, DA and Anderson, B and Jones, GAC (2008) Field-tunable magnetic phases in a semiconductor-based two-dimensional Kondo lattice. In: Physica E: Low-dimensional Systems and Nanostructures, 40 (5). pp. 942-948.

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Abstract

We show the existence of intrinsic localized spins in mesoscopic high-mobility GaAs/AlGaAs heterostructures. Non-equilibrium transport spectroscopy reveals a quasi-regular distribution of the spins, and indicates that the spins interact indirectly via the conduction electrons. The interaction between spins manifests itself in a characteristic zero-bias anomaly near the Fermi energy, and indicates gate voltage-controllable magnetic phases in high-mobility heterostructures. To address this issue further, we have also designed electrostatically tunable Hall devices, that allow a probing of Hall characteristics at the active region of the mesoscopic devices. We show that the zero field Hall coefficient has an anomalous contribution, which can be attributed to scattering by the localized spins. The anomalous contribution can be destroyed by an increase in temperature, source-drain bias, or field range.

Item Type:	Journal Article
Publication:	Physica E: Low-dimensional Systems and Nanostructures
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier. The article is also available in 17th International Conference on Electronic Properties of Two-Dimensional Systems.
Keywords:	Intrinsic spin lattice;2DEG;Spin interaction;Anomalous Hall effect;RKKY.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	06 Aug 2008
Last Modified:	19 Sep 2010 04:48
URI:	http://eprints.iisc.ac.in/id/eprint/15481

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