Ramkumar, K and Satyam, M (1987) Negative-resistance characteristics of polycrystalline silicon resistors. In: Journal of Applied Physics, 62 (1). pp. 174-176.
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Abstract
This paper presents a theoretical analysis to explain the origin of the observed negative-resistance characteristics of polycrystalline silicon resistors. This analysis is based on the effects of self-heating of the resistor on the transportation of carriers across the grain-boundary barrier.
Item Type: | Journal Article |
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Publication: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
Date Deposited: | 17 Jun 2008 |
Last Modified: | 19 Sep 2010 04:46 |
URI: | http://eprints.iisc.ac.in/id/eprint/14472 |
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