Chandra, Mohan M and Prasad, Madhu and Suryan, G (1984) Metal semiconductor diodes as low temperature sensors. In: Journal of Cryogenics, 9 (4). pp. 280-283.
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The use is described of metal-semiconductor diodes (Schottky diodes) as temperature sensors from room temperature to liquid He temperature. Schottky diodes were fabricated by using n or n+-Si substrates with Al as the barrier metal. The voltage-temperature characteristics of the diodes when biased at a fixed forward current are quite similar to that obtained for Si p-n junctions. The characteristics have 2 slopes, with the junction voltage drop varying almost linearly with temperature at $\geq 40K$, after which the voltage drop increases quite rapidly at $\geq 4.2K$. The initial voltage dependence on temperature follows a law of the form V = A + BT + CTlnT and the constants A, B and C can be obtained from the thermionic emission theory. The value of V, as T tends to 0, gives the barrier height at 0 K, unlike a p-n junction for which the value of the band gap is obtained. The shape of the voltage-temperature characteristics is discussed in the light of thermionic emission theory and drop across the bulk resistance.
| Item Type: | Journal Article |
|---|---|
| Publication: | Journal of Cryogenics |
| Publisher: | Indian Cryogenics Council |
| Additional Information: | Copyright of this article belongs to Indian Cryogenics Council. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 05 May 2008 |
| Last Modified: | 27 Aug 2008 13:21 |
| URI: | http://eprints.iisc.ac.in/id/eprint/13834 |
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