UNSPECIFIED (1983) DLTS investigation of iron level in gallium arsenide. In: Nuclear Physics and Solid State Physics Symposium, 1980.
Full text not available from this repository. (Request a copy)Abstract
A DLTS (deep-level transient spectroscopy) system is described, which was used to show the presence, in GaAs:Fe n+-p diodes, of 1 impurity level at 0.63 eV, with a majority-carrier capture cross section of 1.63 X 10-17 cm2. The activation energy of Au in n-Si was detd. as 0.54 eV by this system, in agreement with the accepted value
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | 23(c) |
| Additional Information: | Other details not yet available |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 31 Mar 2008 |
| Last Modified: | 27 Aug 2008 13:18 |
| URI: | http://eprints.iisc.ac.in/id/eprint/13549 |
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