Chaudhuri, Aryan Roy and Krupanidhi, SB (2005) dc leakage behavior in vanadium-doped bismuth titanate thin films. In: Journal of Applied Physics, 98 (9). 094112-1-094112-6.
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Abstract
The dc leakage current behavior and its thickness dependence in vanadium-doped bismuth titanate thin films have been investigated over a wide range of temperatures. The leakage current behavior was explained on the basis of space-charge-limited conduction theory. The current density, calculated from the I-V characteristics, was found to be $2.01X10^{-9} A/cm^2$ at an applied field of 2.9 KV/cm at room temperature. Three distinct regions were observed in the I-V plot which were attributed to the Ohmic region, trap-filled limit, and Child’s law. The influence of the film thickness on the dc leakage current conduction was found to be matching with that predicted by Lampert’s theory.
Item Type: | Journal Article |
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Publication: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 29 Jun 2007 |
Last Modified: | 18 Jan 2012 05:28 |
URI: | http://eprints.iisc.ac.in/id/eprint/11325 |
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