Annealing induced grain growth and grain connectivity in an epitaxial film of $La_0_._6_7Ca_0_._3_3MnO_3$ and its effect on low field colossal magnetoresistance

Paranjape, Mandar and Raychaudhuri, AK (2002) Annealing induced grain growth and grain connectivity in an epitaxial film of $La_0_._6_7Ca_0_._3_3MnO_3$ and its effect on low field colossal magnetoresistance. In: Solid State Communications, 123 (12). pp. 521-525.

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Abstract

We have studied the effect of annealing on a strain-relaxed film of $La_0_._6_7Ca_0_._3_3MnO_3$ (thickness 300 nm) grown epitaxially on $SrTiO_3$, by using local probes like scanning tunneling microscopy and scanning tunneling potentiometry (STP) and bulk probes like resistivity and magnetoresistance. Annealing enhances the film resistivity near the peak and suppresses the peak temperature. We find that annealing leads to growth of large sized grains, but the larger grains have relatively high resistance grain boundary as seen by STP. This in turn enhances the low field MR of the annealed films.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	D.Colossal magnetoresistance;B.Epitaxial films;D.Scanning tunneling potentiometry
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	12 Jun 2007
Last Modified:	19 Sep 2010 04:38
URI:	http://eprints.iisc.ac.in/id/eprint/11184

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