Ghosh, S and Kumar, V (1992) Direct evidence for negative-U nature of DX centre in $Al_xGa_{1-x}As$. In: Proceedings of the Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India, pp. 82-84.
Full text not available from this repository. (Request a copy)Abstract
Photo-Deep Level Transient Spectroscopy detection of a new level with thermal activation energy 0.22 eV for DX centers in silicon doped $Al_xGa_{1-x}As$ (x=0.26) is reported. The observation of this level directly proves the negative-U properties of DX centers and the existence of the metastable state $DX^o$ which is also confirmed by a transient photoconductivity experiment.
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Tata McGraw-Hill |
| Additional Information: | Copyright of this article belongs to Tata McGraw-Hill. |
| Keywords: | aluminium compounds;deep level transient spectroscopy; electron traps;gallium arsenide;III-V semiconductors; photoconductivity |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 10 Jan 2008 |
| Last Modified: | 12 Jan 2012 07:02 |
| URI: | http://eprints.iisc.ac.in/id/eprint/11132 |
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