Laha, A and Saha, S and Krupanidhi, SB (2003) Field Induced Dielectric Properties of $0.7Pb(Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ Thin Films. In: Ferroelectric Thin Films XI. Symposium, 2-5 Dec. 2002, Boston, MA, USA, pp. 379-84.
Full text not available from this repository. (Request a copy)Abstract
DC electric field induced dielectric properties of $0.7Pb(Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-PT) thin films were studied as a function of frequency at different temperatures. It was observed that the dielectric constant (ϵ) and dissipation factor (tanδ) were decreased in presence of bias field. The temperature of dielectric maxima was found to increase with increasing bias level. The low temperature(<Tm) frequency dispersion of dielectric permittivity was suppressed with the application of dc bias. After a certain bias voltage the relaxor property of films was disappeared i.e. the films exhibited normal ferroelectric behavior. Since the absence of long range interaction among the nanopolar clusters in PMN and its family is believed to be the origin of relaxor behavior, disappearance of relaxor nature in PMN-PT (70/30) films could be attributed to manifestation of long-range order at higher bias voltage. This was observed in the temperature dependence of dielectric constant i.e. the films neither exhibited any frequency dispersion in the temperature of dielectric maximum (Tm) nor showed any diffused phase transition. The relaxor property of PMN-PT thin films was studied in terms of diffused phase transition together with frequency dispersion of the temperature of dielectric maximum (Tm). Vogel-Fulcher relation was used to analyze the frequency dependence of temperature of dielectric maximum.
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Material Research Society |
| Additional Information: | Copyright of this article belongs to IEE. |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 12 Jul 2007 |
| Last Modified: | 27 Aug 2008 12:44 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10406 |
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