Ellipsometric investigation of strain reduction in $Si_ {1-x-y}Ge_xC_y$ layers compared to $Si_ {1-x}Ge_x$ layers on silicon

Mukerjee, Subroto and Venkataraman, V (2001) Ellipsometric investigation of strain reduction in $Si_ {1-x-y}Ge_xC_y$ layers compared to $Si_ {1-x}Ge_x$ layers on silicon. In: Solid-State Electronics, 45 (11). pp. 1875-1877.

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Abstract

In this paper we characterize strain in $Si_ {1-x}Ge_x$ and $Si_ {1-x-y}Ge_xC_y$ layers grown on silicon by rapid thermal chemical vapor deposition exploiting the phenomenon of strain-induced birefringence. The technique used is multiple angle of incidence ellipsometry at a wavelength of 670 nm to measure the ordinary and extraordinary refractive index of the layers. We demonstrate that the incorporation of carbon in $Si_ {1-x}Ge_x$ layers reduces strain and increases the critical thickness.

Item Type:	Journal Article
Publication:	Solid-State Electronics
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	Birefringence;Strain;Ellipsometry;Si1-x-yGexCy
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	16 Mar 2007
Last Modified:	19 Sep 2010 04:36
URI:	http://eprints.iisc.ac.in/id/eprint/10365

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