Gurumurthy, S and Bhat, HL and Sundersheshu, BS and Bagai, RK and Kumar, V (1998) Growth and defects in cadmium telluride and related alloys. In: SPIE- 9th International Workshop on Physics of Semiconductor Devices: IWPSD97, Delhi, India, Vol.3316 (2),738-745.
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CdTe and related alloy crystals with large single grain areas have been grown and characterized. Zinc distribution in CdZnTe (Zn 4%) crystals have been controlled (±0.5%) by post growth annealing. The mid gap defect states in CdTe have been characterized by photoluminescence spectroscopy and can be related to deviation from stoichiometry and vacancy impurity complexes. Hydrogenation studies on both undoped p-type and n-type CdTe:In shows that both donors and acceptors are passivated by the diffusing atomic hydrogen. Exposure of CdTe:In to nitrogen plasma (NPE) leads to Au/n-CdTe Schottky diodes showing excellent and stable rectifying characteristics with low leakage current. The NPE process studies done here have great significance for CdTe based device fabrication
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Society of Photo-Optical Instrumentation Engineers (SPIE) |
| Additional Information: | Copyright of this article belongs to Society of Photo-Optical Instrumentation Engineers. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 25 May 2007 |
| Last Modified: | 27 Aug 2008 12:40 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10050 |
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