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Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Vishwas, M and Rao, Narasimha K and Chakradhar, RPS and Raichur, Ashok M (2014) Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 25 (10). pp. 4495-4500.

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Official URL: http://dx.doi.org/ 10.1007/s10854-014-2193-7

Abstract

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 08 Nov 2014 05:04
Last Modified: 08 Nov 2014 05:04
URI: http://eprints.iisc.ac.in/id/eprint/50157

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