Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications

Srinivasan, R and Bhat, Navakanta (2005) Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications. In: 18th International Conference on VLSI Design, 2005, 3-7 January, Kolkata, India, 392 -396.

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Abstract

In this paper, we have studied and compared the RF performance metrics, unity gain frequency $(f_t)$ and Noise Figure (NF), of the devices with channel engineering consisting of halo and super steep retrograde channel (SSRC) implants, and the devices with uniform channel doping concentration, using process, device, and mixed mode simulations. The simulation results show that at 90nm gate lengths, for a given off-state leakage constraint $(I_O_F_F)$, devices with uniform channel doping concentration deliver higher $f_t$ and lower NF than the devices which used halo and SSRC, due to better sub-threshold slope and transconductance. However, at $0.25$\mu$m$ technology the same is not true. Therefore, in the $90nm$ devices uniform channel doping profile is recommended to get better RF performance.

Item Type:	Conference Paper
Publisher:	IEEE
Additional Information:	1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	25 Nov 2005
Last Modified:	19 Sep 2010 04:21
URI:	http://eprints.iisc.ac.in/id/eprint/4091

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