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Number of items: 8.

Journal Article

Vura, S and Rai, RK and Nukala, P and Raghavan, S (2022) Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration. In: Thin Solid Films, 758 .

Vura, S and Ul Muazzam, U and Kumar, V and Vanjari, SC and Muralidharan, R and Digbijoy, N and Nukala, P and Raghavan, S (2022) Monolithic Epitaxial Integration of β-Ga2O3with 100 Si for Deep Ultraviolet Photodetectors. In: ACS Applied Electronic Materials, 4 (4). pp. 1619-1625.

Ravindra, P and Chaudhary, R and Athresh, E and Vura, S and Raghavan, S and Ranjan, R and Majumdar, K and Avasthi, S (2021) Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate. In: Semiconductor Science and Technology, 36 (5).

Vura, S and Jeyaselvan, V and Biswas, R and Raghunathan, V and Selvaraja, SK and Raghavan, S (2021) Epitaxial BaTiO3on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer. In: ACS Applied Electronic Materials, 3 (2). pp. 687-695.

Charan, VS and Vura, S and Muralidharan, R and Raghavan, S and Nath, DN (2021) Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon. In: IEEE Electron Device Letters, 42 (4). pp. 497-500.

Kumari, K and Vura, S and Raghavan, S and Avasthi, S (2021) Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing. In: Materials Letters, 285 .

Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .

Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.

This list was generated on Fri Mar 29 08:07:12 2024 IST.