|
 | Up a level |
Tripathy, S and Chowdhury, D and Ragavendra, HV and Jain, RK and Sriramkumar, L (2023) Circumventing the challenges in the choice of the nonconformal coupling function in inflationary magnetogenesis. In: Physical Review D, 107 (4).
Baby, R and Roy, SK and Tripathy, S and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs. In: Physica Status Solidi (A) Applications and Materials Science .
Tripathy, S and Chowdhury, D and Jain, RK and Sriramkumar, L (2022) Challenges in the choice of the nonconformal coupling function in inflationary magnetogenesis. In: Physical Review D, 105 (6).
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.
Kumar, S and Pratiyush, AS and Dolmanan, SB and Tan, HR and Tripathy, S and Muralidharan, R and Nath, DN (2019) Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111). In: ACS Applied Electronic Materials, 1 (3). pp. 340-345.
Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.
Rao, Subba KS and Tripathy, S (2003) Effect of aging on swelling and swell-shrink behavior of a compacted expansive soil. In: Geotechnical Testing Journal, 26 (1). 36-46 .
Tripathy, S and Rao, Subba KS and Fredlund, DG (2002) Water content - void ratio swell-shrink paths of compacted expansive soils. In: Canadian Geotechnical Journal / Revue Canadienne de Géotechnique, 39 (4). pp. 938-959.
