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Chandra, Mohan M and Prasad, Madhu and Suryan, G (1984) Metal semiconductor diodes as low temperature sensors. In: Journal of Cryogenics, 9 (4). pp. 280-283.
Chandra, MM and Suryan, G (1983) Low-intensity differential photocapacitance of MOS structures. In: Solid-State Electronics, 26 (8). pp. 731-737.
Suryan, G (1981) Capital Equipment. In: Electronics Information and Planning, 8 (6). p. 449.
Suryan, G (1981) Development And Production Of Fused Quartz. In: Electronics Information and Planning, 8 (6). p. 433.
Vasudevamurthy, AR and Suryan, G (1981) A Status-Report on R and D and Production of Semiconductor Grade Silicon. In: Electronics Information and Planning, 8 (6). p. 403.
Nagabhushana, S and Krishnan, S and Suryan, G (1974) Generation of High Magnetic Fields Using Thyristors. In: IEEE transaction on Industrial Electronics and Control Instrumentation, IECI-2 (4). pp. 241-243.
Susila, G and Suryan, G (1971) Electron-hole recombination in cobalt-doped p-type germanium. In: Journal of Physics and Chemistry of Solids, 32 (7). pp. 1463-1470.
Mahadevan, S and Suryan, G (1968) Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region. In: Physics Letters A, 27 (3). pp. 149-150.
Suryan, G (2002) B. V. Raghavendra Rao. In: Current Science (Bangalore), 83 (12). p. 1597.
Suryan, G (2001) What is Time? A New Mathematico- Physical and Information Theoretic Approach. [Preprint]
