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Conference Paper

Malik, RR and Joshi, V and Chaudhuri, RR and Mir, MA and Khan, Z and Shaji, AN and Bhattacharya, M and Vitthal, AT and Shrivastava, M (2023) Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

Malik, RR and Shaji, AN and Jayshree, ; and Khan, Z and Bhattacharya, M and Munshi, MA and Chaudhuri, RR and Joshi, V and Shrivastava, M (2023) Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In: UNSPECIFIED.