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Reddy, Nanda Kumar N and Akkera, Harish Sharma and Sekhar, Chandra M and Uthanna, S (2019) Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure. In: SILICON, 11 (1). pp. 159-164.
Kondaiah, P and Madhavi, V and Sekhar, Chandra M and Rao, Mohan G and Uthanna, S (2015) Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature. In: SCIENCE OF ADVANCED MATERIALS, 7 (8). pp. 1640-1648.
Sekhar, Chandra M and Reddy, Nanda Kumar N and Rao, Venkata B and Rao, Mohan G and Uthanna, S (2014) Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors. In: SURFACE AND INTERFACE ANALYSIS, 46 (7). pp. 465-471.
Kondaiah, P and Madhavi, V and Sekhar, Chandra M and Rao, Mohan G and Uthanna, S (2013) Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors. In: Science of Advanced Materials, 5 (4). pp. 398-405.
Sekhar, Chandra M and Kondaiah, P and Rao, Mohan G and Chandra, Jagadeesh SV and Uthanna, S (2013) Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors. In: SUPERLATTICES AND MICROSTRUCTURES, 62 . pp. 68-80.
Sekhar, Chandra M and Kondaiah, P and Chandra, Jagadeesh SV and Rao, Mohan G and Uthanna, S (2012) Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric. In: SURFACE AND INTERFACE ANALYSIS, 44 (9). pp. 1299-1304.
Sekhar, Chandra M and Kondaiah, P and Chandra, Jagadeesh SV and Rao, Mohan G and Uthanna, S (2011) Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO(2) thin films by DC magnetron sputtering. In: Applied Surface Science, 258 (5). pp. 1789-1796.
