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Number of items: 6.

Conference Paper

Kalra, A and Rathkanthiwar, S and Remesh, N and Muralidharan, R and Nath, D and Raghavan, S (2020) Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang; Malaysia.

Journal Article

Subhani, KN and Remesh, N and S, N and Raghavan, S and R, M and Nath, DN and Bhat, KN (2021) Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. In: Solid-State Electronics, 186 .

Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.

Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.

Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .

Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .

This list was generated on Wed Dec 8 23:44:44 2021 IST.