|
 | Up a level |
Ramesh, CK and Reddy, Rajagopal V and Rao, Koteswara KSR (2006) Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. In: Journal of Materials Science: Materials in Electronics, 17 (12). pp. 999-1004.
Bhuvaneswari, HB and Reddy, Rajagopal V and Rao, Mohan G (2006) Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices. In: Journal of Materials Science: Materials in Electronics, 17 (5). pp. 335-339.
Bhuvaneswari, HB and Reddy, Rajagopal V and Chandramani, R and Rao, Mohan G (2004) Annealing effects on zirconium nitride films. In: Applied Surface Science, 230 (1-4). pp. 88-93.
Bhuvaneswari, HB and Priya, Nithiya I and Chandramani, R and Reddy, Rajagopal V and Rao, Mohan G (2003) Studies on zirconium nitride films deposited by reactive magnetron sputtering. In: Crystal Research and Technology, 38 (12). pp. 1047-1051.
