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Suraj, S and Rathkanthiwar, S and Nath, D and Raghavan, S and Selvaraja, SK (2022) GaN-on-Sapphire Photonic Circuit with Polarization Independent Grating Coupler at 1550 nm. In: Optics InfoBase Conference Papers, 24 - 28 July 2022, Maastricht.
Kumar, VK and Rathkanthiwar, S and Rao, A and Ghosh, P and Dhar, S and Chandrasekar, H and Choudhury, T and Shivashankar, SA and Raghavan, S (2021) Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. In: ACS Applied Nano Materials, 4 (7). pp. 6734-6744.
Rathkanthiwar, S and Kalra, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111). In: IEEE Transactions on Electron Devices, 67 (10). pp. 4281-4287.
Kalra, A and Rathkanthiwar, S and Remesh, N and Muralidharan, R and Nath, D and Raghavan, S (2020) Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang; Malaysia.
Rathkanthiwar, S and Kalra, A and Remesh, N and Bardhan, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111). In: Journal of Applied Physics, 127 (21).
Kalra, A and Rathkanthiwar, S and Muralidharan, R and Raghavan, S and Nath, DN (2020) Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes. In: Semiconductor Science and Technology, 35 (3).
