Number of items: 2.
Journal Article
Kumar, Arvind and Mondal, Sandip and Rao, K S R, Koteswara
(2017)
Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy.
In: APPLIED PHYSICS LETTERS, 110
(13).
Kumar, Arvind and Mondal, Sandip and Rao, K S R , Koteswara
(2017)
Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications.
In: JOURNAL OF APPLIED PHYSICS, 121
(8).
This list was generated on Fri Apr 19 07:16:08 2024 IST.
