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Raghavan, Srinivasan (2010) Integration with Silicon Based Microelectronics. [Book Chapter]
Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.
Shankar, Bhawani and Sengupta, Rudrarup and Gupta, Sayak Dutta and Soni, Ankit and Mohan, Nagaboopathy and Bhat, Navakanta and Raghavan, Srinivasan and Shrivastava, Mayank (2017) On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2017) ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 361-365.
Krishna, N P Vamsi and Ramesh, Nayana and Mohan, Nagaboopathy and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N and Sen, Prosenjit (2017) Gallium Nitride transistor on glass using epoxy mediated substrate transfer technology. In: 19th IEEE Electronics Packaging Technology Conference (EPTC), DEC 06-09, 2017, Singapore, SINGAPORE.
Dhar, Sukanya and Lalithambika, Anjali and Kumar, Kranthi and Raghavan, Srinivasan (2017) Thermodynamic Modeling of W-C-O-H-S System for Controlled Growth of WS2 Atomic Layers by True CVD. In: Symposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 held during the 231st Meeting of The Electrochemical-Society, MAY 28-JUN 01, 2017, New Orleans, LA, pp. 49-59.
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Suran, Swathi and Bharadwaj, Krishna and Raghavan, Srinivasan and Varma, Manoj M (2016) Seeing the Unseen with Localized Optical Contrast. In: Conference on Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XIII, FEB 15-17, 2016, San Francisco, CA.
Paria, Debadrita and Roy, Kallol and Kumar, Shishir and Singh, Haobijam Johnson and Raghavan, Srinivasan and Ghosh, Arindam and Ghosh, Ambarish (2015) Extremely High Near Field Enhancement in a Novel Plasmonic Nano Material used for Photovoltage Generation. In: Conference on Photonic and Phononic Properties of Engineered Nanostructures V, FEB 09-12, 2015, San Francisco, CA.
Chaurasia, Saloni and Raghavan, Srinivasan and Avasthi, Sushobhan (2017) Epitaxial germanium thin films on silicon (100) using two-step process. In: 3rd International Conference on Emerging Electronics, ICEE 2016, 27-30 December 2016, Mumbai, pp. 1-4.
Kalra, Anisha and Muazzam, Usman Ul and Muralidharan, R and Raghavan, Srinivasan and Nath, Digbijoy N (2022) The road ahead for ultrawide bandgap solar-blind UV photodetectors. In: Journal of Applied Physics, 131 (15). ISSN 0021-8979
Pandey, Mrityunjay and Soni, Radhika and Mathur, Avi and Singh, Akash and Singh, Abhishek Kumar and Raghavan, Srinivasan and Chandni, U (2019) Noninvasive Subsurface Electrical Probe for Encapsulated Layers in van der Waals Heterostructures. In: PHYSICAL REVIEW APPLIED, 12 (6).
Remesh, Nayana and Kumar, Sandeep and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE .
Soman, Rohith and Raghavan, Srinivasan and Bhat, Navakanta (2019) An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (12).
Shankar, Bhawani and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Reliability of AlGaN/GaN HEMT Technology. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (9). pp. 3756-3763.
Shankar, Bhawani and Soni, Ankit and Chandrasekar, Hareesh and Raghavan, Srinivasan and Shrivastava, Mayank (2019) First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3433-3440.
Kalra, Anisha and Rathkanthiwar, Shashwat and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N (2019) Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (15). pp. 1237-1240.
Solanke, Swanand V and Rathkanthiwar, Shashwat and Kalra, Anisha and Mech, Roop Kumar and Rangarajan, Muralidharan and Raghavan, Srinivasan and Nath, Digbijoy N (2019) Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and beta-In2Se3/GaN. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (7).
Shankar, Bhawani and Gupta, Sayak Dutta and Soni, Ankit and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Behavior of AlGaN/GaN Schottky Diodes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 19 (2). pp. 437-444.
Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.
Samanta, Chandan and Arora, Nishta and Kumar, Kranthi and Raghavan, Srinivasan and Naik, AK (2019) The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator. In: NANOSCALE, 11 (17). pp. 8394-8401.
Remesh, Nayana and Mohan, Nagaboopathy and Kumar, Sandeep and Prabhu, Prabhu and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 613-618.
Soman, Rohith and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Bhat, Navakanta and Raghavan, Srinivasan (2018) Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates. In: JOURNAL OF APPLIED PHYSICS, 124 (24).
Rathkanthiwar, Shashwat and Kaira, Anisha and Muralidharan, Rangarajan and Nath, Digbijoy N and Raghavan, Srinivasan (2018) Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors. In: JOURNAL OF CRYSTAL GROWTH, 498 . pp. 35-42.
Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).
Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.
Yaddanapudi, Krishna and Saha, Sabyasachi and Raghavan, Srinivasan and Muraleedharan, K and Banerjee, Dipankar (2018) Nitridation of Sapphire as a Precursor to GaN Growth: Structure and Chemistry. In: CRYSTAL GROWTH & DESIGN, 18 (9). pp. 4978-4986.
Suran, Swathi and Balasubramanian, Krishna and Raghavan, Srinivasan and Varma, Manoj M (2018) Spatially resolved observation of water transport across nanomembranes using bright-field nanoscopy. In: APPLIED PHYSICS LETTERS, 113 (4).
Chaurasia, Saloni and Mohan, Nagaboopathy and Raghavan, Srinivasan and Avasthi, Sushobhan (2018) Wafer-scale epitaxial germanium (100), (111), (110) films on silicon using liquid phase crystallization. In: AIP ADVANCES, 8 (7).
Kalra, Anisha and Vura, Sandeep and Rathkanthiwar, Shashwat and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N (2018) Demonstration of high-responsivity epitaxial beta-Ga2O3/GaN metal-heterojunction-metal broadband UV-A/UV-C detector. In: APPLIED PHYSICS EXPRESS, 11 (6).
Bardhan, Abheek and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Ghosh, Priyadarshini and Rao, D V Sridhara and Raghavan, Srinivasan (2018) The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. In: JOURNAL OF APPLIED PHYSICS, 123 (16).
Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).
Chouhan, Arun Singh and Athresh, Eashwer and Ranjan, Rajeev and Raghavan, Srinivasan and Avasthi, Sushobhan (2017) BaBiO3: A potential absorber for all-oxide photovoltaics. In: MATERIALS LETTERS, 210 . pp. 218-222.
Banerjee, Amiya and Narayanachari, K V L V and Raghavan, Srinivasan (2017) Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films. In: RSC ADVANCES, 7 (29). pp. 17832-17840.
Rathkanthiwar, Shashwat and Kalra, Anisha and Solanke, Swanand V and Mohta, Neha and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N (2017) Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors. In: JOURNAL OF APPLIED PHYSICS, 121 (16).
Chouhan, Arun Singh and Jasti, Naga Prathibha and Hadke, Shreyash and Raghavan, Srinivasan and Avasthi, Sushobhan (2017) Large grained and high charge carrier lifetime CH3NH3PbI3 thin-films: implications for perovskite solar cells. In: CURRENT APPLIED PHYSICS, 17 (10). pp. 1335-1340.
Mishra, Abhishek and Nandan, Ravi and Raghavan, Srinivasan and Shrivastava, Mayank (2017) Nano-second time resolved investigations on thermal implications of high-field transport through MWCNTs. In: APPLIED PHYSICS LETTERS, 110 (23).
Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Chandrasekar, Hareesh and Paul, Tathagata and Mohan, Sangeneni and Ghosh, Arindam and Raghavan, Srinivasan and Bhat, Navakanta (2017) Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs. In: ADVANCED ELECTRONIC MATERIALS, 3 (1).
Mishra, Abhishek and Meersha, Adil and Raghavan, Srinivasan and Shrivastava, Mayank (2017) Observing non-equilibrium state of transport through graphene channel at the nano-second time-scale. In: APPLIED PHYSICS LETTERS, 111 (26).
Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.
Chandrasekar, Hareesh and Bhat, KN and Rangarajan, Muralidharan and Raghavan, Srinivasan and Bhat, Navakanta (2017) Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces. In: SCIENTIFIC REPORTS, 7 .
Suran, Swathi and Bharadwaj, Krishna and Raghavan, Srinivasan and Varma, Manoj M (2016) Bright-field Nanoscopy: Visualizing Nano-structures with Localized Optical Contrast Using a Conventional Microscope. In: SCIENTIFIC REPORTS, 6 .
Bardhan, Abheek and Mohan, Nagaboopathy and Soman, Rohith and Manikant, * and Raghavan, Srinivasan (2016) Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111). In: IETE TECHNICAL REVIEW, 33 (1, SI). pp. 82-87.
Narayanachari, KVLV and Chandrasekar, Hareesh and Banerjee, Amiya and Varma, KBR and Ranjan, Rajeev and Bhat, Navakanta and Raghavan, Srinivasan (2016) Growth stress induced tunability of dielectric permittivity in thin films. In: JOURNAL OF APPLIED PHYSICS, 119 (1).
Bharadwaj, Krishna B and Chandrasekar, Hareesh and Nath, Digbijoy and Pratap, Rudra and Raghavan, Srinivasan (2016) Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49 (26).
Kochat, Vidya and Tiwary, Chandra Sekhar and Biswas, Tathagata and Ramalingam, Gopalakrishnan and Hsieh, Kimberly and Chattopadhyay, Kamanio and Raghavan, Srinivasan and Jain, Manish and Ghosh, Arindam (2016) Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene. In: NANO LETTERS, 16 (1). pp. 562-567.
Bharadwaj, Krishna B and Nath, Digbijoy and Pratap, Rudra and Raghavan, Srinivasan (2016) Making consistent contacts to graphene: effect of architecture and growth induced defects. In: NANOTECHNOLOGY, 27 (20).
Seetharnraju, Sindhu and Kumar, Shishir and Bharadwaj, Krishna B and Madras, Giridhar and Raghavan, Srinivasan and Ramamurthy, Praveen Chandrashekarapura (2016) Million-Fold Decrease in Polymer Moisture Permeability by a Graphene Monolayer. In: ACS Nano, 10 (7). pp. 6501-6509.
Kumar, Shishir and Pratap, Rudra and Raghavan, Srinivasan (2016) Ultrahigh fluid diffusivity in graphene-lined nanochannels. In: APPLIED PHYSICS LETTERS, 108 (9).
Choudhury, Tanushree H and Raghavan, Srinivasan (2015) Anodization of sputtered metallic films: The microstructural connection. In: SCRIPTA MATERIALIA, 105 . pp. 18-21.
Chandrasekar, Hareesh and Singh, Manikant and Raghavan, Srinivasan and Bhat, Navakanta (2015) Estimation of background carrier concentration in fully depleted GaN films. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11).
Kumar, Shishir and Kaushik, Swati and Pratap, Rudra and Raghavan, Srinivasan (2015) Graphene on Paper: A Simple, Low-Cost Chemical Sensing Platform. In: ACS APPLIED MATERIALS & INTERFACES, 7 (4). pp. 2189-2194.
Ghosh, Priyadarshini and Kumar, Shishir and Ramalingam, Gopalakrishnan and Kochat, Vidya and Radhakrishnan, Madhavan and Dhar, Sukanya and Suwas, Satyam and Ghosh, Arindam and Ravishankar, N and Raghavan, Srinivasan (2015) Insights on Defect-Mediated Heterogeneous Nucleation of Graphene on Copper. In: JOURNAL OF PHYSICAL CHEMISTRY C, 119 (5). pp. 2513-2522.
Mohan, Nagaboopathy and Manikant, * and Soman, Rohith and Raghavan, Srinivasan (2015) Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes. In: JOURNAL OF APPLIED PHYSICS, 118 (13).
Kochat, Vidya and Sahoo, Anindita and Pal, Atindra Nath and Eashwer, Sneha and Ramalingam, Gopalakrishnan and Sampathkumar, Arjun and Tero, Ryugu and Thu, Tran Viet and Kaushal, Sanjeev and Okada, Hiroshi and Sandhu, Adarsh and Raghavan, Srinivasan and Ghosh, Arindam (2015) Origin of 1/f noise in graphene produced for large-scale applications in electronics. In: IET CIRCUITS DEVICES & SYSTEMS, 9 (1, SI). pp. 52-58.
Chandrasekar, Hareesh and Bharadwaj, Krishna B and Vaidyuala, Kranthi Kumar and Suran, Swathi and Bhat, Navakanta and Varma, Manoj and Raghavan, Srinivasan (2015) Spotting 2D atomic layers on aluminum nitride thin films. In: NANOTECHNOLOGY, 26 (42).
Paria, Debadrita and Roy, Kallol and Singh, Haobijam Johnson and Kumar, Shishir and Raghavan, Srinivasan and Ghosh, Arindam and Ghosh, Ambarish (2015) Ultrahigh Field Enhancement and Photoresponse in Atomically Separated Arrays of Plasmonic Dimers. In: ADVANCED MATERIALS, 27 (10). 1751+.
Kumar, Kranthi V and Dhar, Sukanya and Choudhury, Tanushree H and Shivashankar, SA and Raghavan, Srinivasan (2015) A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2. In: NANOSCALE, 7 (17). pp. 7802-7810.
Basu, Palash Kumar and Indukuri, Deepthi and Keshavan, Sandeep and Navratna, Vikas and Vanjari, Siva Rama Krishna and Raghavan, Srinivasan and Bhat, Navakanta (2014) Graphene based E. coli sensor on flexible acetate sheet. In: SENSORS AND ACTUATORS B-CHEMICAL, 190 . pp. 342-347.
Chaudhary, Aakanksha and Nag, Poshit M and Ravishankar, N and Thomas, Tiju and Jain, Manish and Raghavan, Srinivasan (2014) Synergistic Effect of Mo plus Cu Codoping on the Photocatalytic Behavior of Metastable TiO2 Solid Solutions. In: JOURNAL OF PHYSICAL CHEMISTRY C, 118 (51). pp. 29788-29795.
Bharadwaj, BKrishna and Pratap, Rudra and Raghavan, Srinivasan (2014) Transfer free suspended graphene devices on silicon using electrodeposited copper. In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32 (1).
Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.
Roy, Kallol and Padmanabhan, Medini and Goswami, Srijit and Sai, Phanindra T and Ramalingam, Gopalakrishnan and Raghavan, Srinivasan and Ghosh, Arindam (2013) Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. In: NATURE NANOTECHNOLOGY, 8 (11). pp. 826-830.
Nagaboopathy, Mohan and Ravishankar, Narayanan and Raghavan, Srinivasan (2013) Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth. In: APPLIED PHYSICS LETTERS, 103 (4).
Padmanabhan, Medini and Roy, Kallol and Ramalingam, Gopalakrishnan and Raghavan, Srinivasan and Ghosh, Arindam (2012) Electrochemical Integration of Graphene with Light-Absorbing Copper-Based Thin Films. In: The Journal of Physical Chemistry C, 116 (1). pp. 1200-1204.
Chaudhary, Aakanksha and Choudhury, Tanushree H and Naik, Swati and Raghavan, Srinivasan (2012) Adherent Nanoporous Anatase TiO2 Membranes on Stainless Steel Substrates. In: Journal of the American Ceramic Society, 95 (1). pp. 64-66.
Choudhury, Tanushree H and Rajamathi, Michael and Raghavan, Srinivasan (2012) Chemically enhanced thermal stability of anodized nanostructured zirconia membranes. In: Journal of Materials Chemistry, 22 (14). pp. 6885-6893.
Narayanachari, KVLV and Raghavan, Srinivasan (2012) Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates. In: JOURNAL OF APPLIED PHYSICS, 112 (7).
Shakthivel, Dhayalan and Raghavan, Srinivasan (2012) Vapor-liquid-solid growth of Si nanowires: A kinetic analysis. In: Journal of Applied Physics, 112 (2).
Kochat, Vidya and Pal, Atindra Nath and Sneha, ES and Sampathkumar, Arjun and Gairola, Anshita and Shivashankar, SA and Raghavan, Srinivasan and Ghosh, Arindam (2011) High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy. In: Journal of Applied Physics, 110 (1).
Atindra Pal, Nath and Ghatak, Subhamoy and Kochat, Vidya and ES, Sneha and Sampathkumar, Arjun and Raghavan, Srinivasan and Ghosh, Arindam (2011) Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion. In: ACS Nano, 5 (3). pp. 2075-2081.
Raghavan, Srinivasan (2011) Kinetic approach to dislocation bending in low-mobility films. In: Physical Review B: Condensed Matter and Materials Physics, 83 (5).
Raghavendra, Venugopal B and Naik, Swati and Antony, Meera and Ramalingam, Gopalakrishnan and Rajamathi, Michael and Raghavan, Srinivasan (2011) Amorphous, Monoclinic, and Tetragonal Porous Zirconia Through a Controlled Self-Sustained Combustion Route. In: Journal of the American Ceramic Society, 94 (6). pp. 1747-1755.
Raghavan, Srinivasan (2014) GaN and the 2014 Nobel Prize in physics. In: CURRENT SCIENCE, 107 (11). pp. 1782-1785.
