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Ginley, D and Ager, J and Agrawal, R and Alam, MA and Arora, BM and Avasthi, S and Basak, D and Bhargava, P and Biswas, P and Bora, B and Braunecker, WA and Buonassisi, T and Dhage, S and Dhere, N and Garner, S and Hu, X and Jhunjhunwala, A and Kabra, D and Kavaipatti, B and Kazmerski, L and Kottantharayil, A and Kumar, R and Lo, C and Mani, M and Nair, PR and Narsamma, L and Olson, DC and Pal, AJ and Raghavan, S and Ramamurthy, P and Sarada, B and Sarkar, S and Sastry, OS and Sridhar, H and Tamizmani, G and Urban, J and van Hest, M and Vasi, J and Wang, Y and Wu, Y (2020) Sustainable Photovoltaics. [Book Chapter]
Meersha, Adil and Variar, H B and Bhardwaj, K and Mishra, A and Raghavan, S and Bhat, N and Shrivastava, Mayank (2016) Record Low Metal - (CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering. In: 62nd Annual IEEE International Electron Devices Meeting (IEDM), DEC 03-07, 2016, San Francisco, CA.
Shakthivel, D and Taube, W and Raghavan, S and Dahiya, R (2015) VLS Growth Mechanism of Si-Nanowires for Flexible Electronics. In: 2015 11th Conference on PhD Res in Microelect & Elect PRIME, JUN 29-JUL 02, 2015-2016, Glasgow, ENGLAND, pp. 349-352.
Suraj, S and Rathkanthiwar, S and Nath, D and Raghavan, S and Selvaraja, SK (2022) GaN-on-Sapphire Photonic Circuit with Polarization Independent Grating Coupler at 1550 nm. In: Optics InfoBase Conference Papers, 24 - 28 July 2022, Maastricht.
Gowrisankar, A and Vanjari, SC and Bardhan, A and Venugopalarao, A and Chandrasekar, H and Muralidharan, R and Raghavan, S and Nath, DN (2022) AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore.
Rao, A and Kumar, K and Raghavan, S (2022) Modeling and Experimental Evidence of the Effect of Concentration Gradients on the Surface Processes during CVD Growth of MoS2. In: 5th IEEE International Conference on Emerging Electronics, ICEE 2020, 26 - 28 November 2020, New Delhi.
Diwan, A and Vaideeswaran, R and Shah, S and Singh, A and Raghavan, S and Khare, S and Unni, V and Vyas, S and Rajpuria, A and Yarra, C and Mittal, A and Ghosh, PK and Jyothi, P and Bali, K and Seshadri, V and Sitaram, S and Bharadwaj, S and Nanavati, J and Nanavati, R and Sankaranarayanan, K (2021) Mucs 2021: Multilingual and code-switching asr challenges for low resource indian languages. In: 22nd Annual Conference of the International Speech Communication Association, INTERSPEECH 2021, 30 Aug - 03 Sep 2021, Brno, pp. 351-355.
Kalra, A and Rathkanthiwar, S and Remesh, N and Muralidharan, R and Nath, D and Raghavan, S (2020) Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang; Malaysia.
Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.
Dutta Gupta, S and Joshi, V and Shankar, B and Shikha, S and Raghavan, S and Shrivastava, M (2019) UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Mishra, A and Meersha, A and Kranthi, NK and Trivedi, K and Variar, HB and Veenadhari Bellamkonda, NS and Raghavan, S and Shrivastava, M (2019) First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Viegas, AE and Dutta, S and Rekha, S and Bobji, MS and Raghavan, S and Bhat, N (2019) 3d nano capacitors using electrodeposited nickel nanowires in porous anodic alumina template. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 577-581.
Dash, A and Nambiar, SR and Pandey, M and Raghavan, S and Naik, A and Selvaraja, SK (2019) Low-power four-wave mixing in graphene-on-SiN micro-ring resonator. In: 2D Photonic Materials and Devices II 2019, 6 - 7 February 2019, San Francisco.
Saha, S and Yaddanapudi, K and Muraleedharan, K and Raghavan, S and Banerjee, D (2018) GaN Growth Process by MOCVD Revisited: TEM Study of Microstructural Evolution Presented. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
Soman, R and Raghavan, S and Bhat, N (2018) Normally off AlGaN/GaN FinFET devices on Si substrate. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17 - 19 December 2018, Bengaluru.
Chaurasia, S and Raghavan, S and Avasthi, S (2018) High Quality Epitaxial Germanium on Si (110) using Liquid Phase Crystallization for Low - Cost III-V Solar-Cells. In: 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, 10 - 15 June 2018, Waikoloa Village, pp. 192-195.
Chouhan, AS and Jasti, NP and Hadke, S and Raghavan, S and Avasthi, S (2018) Perovskite Grain Size modulation by annealing in Methyl-Amine Environment. In: 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, 25 - 30 June 2017, Washington, pp. 986-988.
Soman, R and Sharma, M and Ramesh, N and Nath, D and Muralidharan, R and Bhat, KN and Raghavan, S and Bhat, N (2018) (Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate. In: Symposium on High Purity and High Mobility Semiconductors 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 161-168.
Shankar, B and Singh, R and Sengupta, R and Khand, H and Soni, A and Gupta, SD and Raghavan, S and Gossner, H and Shrivastava, M (2018) Trap assisted stress induced ESD reliability of GaN schottky diodes. In: 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, 23 - 28 September 2018, Reno.
Raghavan, S and Sastry, PS and Ramakrishnan, KR (1987) A Contour Based Algorithm for the Stereo Correspondence Problem. In: Proc. First Int. Conf. on Computer Vision, May 1987, London.
Pandey, M and Watanabe, K and Taniguchi, T and Raghavan, S and Chandni, U (2024) Phonon-mediated magneto-resonances in biased graphene layers. In: 2D Materials, 11 (1).
Parate, SK and Vura, S and Pal, S and Khandelwal, U and Sandilya Ventrapragada, RS and Rai, RK and Molleti, SH and Kumar, V and Patil, G and Jain, M and Mallya, A and Ahmadi, M and Kooi, B and Avasthi, S and Ranjan, R and Raghavan, S and Chandorkar, S and Nukala, P (2024) Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100). In: Nature Communications, 15 (1).
Ul Muazzam, U and Muralidharan, R and Raghavan, S and Nath, DN (2023) Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD. In: Optical Materials, 145 .
Baby, R and Mandal, M and Roy, SK and Bardhan, A and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing. In: Microelectronic Engineering, 282 .
Sunny, SP and Ravindra, DR and Hariharan, A and Mukhia, N and Gurudath, S and Keerthi, G and Raghavan, S and Kolur, T and Shetty, V and Vidya Bushan, R and Surolia, A and Satyajit, T and Chandrashekhar, P and Nisheena, R and Pandya, HJ and Pillai, V and Praveen Birur, N and Kuriakose, MA and Suresh, A (2023) CD44-SNA1 integrated cytopathology for delineation of high grade dysplastic and neoplastic oral lesions. In: PLoS ONE, 18 (9 Sept).
Rao, A and Sanjay, S and Dey, V and Ahmadi, M and Yadav, P and Venugopalrao, A and Bhat, N and Kooi, B and Raghavan, S and Nukala, P (2023) Realizing avalanche criticality in neuromorphic networks on a 2D hBN platform. In: Materials Horizons, 10 (11). 5235 -5245.
Baby, R and Roy, SK and Tripathy, S and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs. In: Physica Status Solidi (A) Applications and Materials Science .
Vura, S and Rai, RK and Nukala, P and Raghavan, S (2022) Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration. In: Thin Solid Films, 758 .
Charan, VS and Muralidharan, R and Raghavan, S and Nath, DN (2022) 20.2 GHz-µm fT–LG in InAlN/GaN-on-Si High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Rao, A and Raghavan, S (2022) Mechanistic insights into supersaturation mediated large area growth of hexagonal boron nitride for graphene electronics. In: Journal of Materials Chemistry C, 10 (28). pp. 10412-10423.
Vura, S and Ul Muazzam, U and Kumar, V and Vanjari, SC and Muralidharan, R and Digbijoy, N and Nukala, P and Raghavan, S (2022) Monolithic Epitaxial Integration of β-Ga2O3with 100 Si for Deep Ultraviolet Photodetectors. In: ACS Applied Electronic Materials, 4 (4). pp. 1619-1625.
Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).
Raja, S and Paul, A and Raghavan, S and Narayanan, S and Shee, S and Singh, A and Varshney, U and Gopal, B and Vijayan, M (2022) Structural variability of Mycobacterium tuberculosis SSB and susceptibility to inhibition. In: Current Science, 122 (3). pp. 281-289.
Bardhan, A and Raghavan, S (2022) Growth design for high quality AlxGa(1�x)N layer with high AlN-fraction on Si (1 1 1) substrate by MOCVD. In: Journal of Crystal Growth, 578 .
Remesh, N and Chandrasekar, H and Venugopalrao, A and Raghavan, S and Rangarajan, M and Nath, DN (2021) Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications. In: Journal of Applied Physics, 130 (7).
Kumar, VK and Rathkanthiwar, S and Rao, A and Ghosh, P and Dhar, S and Chandrasekar, H and Choudhury, T and Shivashankar, SA and Raghavan, S (2021) Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors. In: ACS Applied Nano Materials, 4 (7). pp. 6734-6744.
Lalithambika, A and Kumar, VK and Jain, M and Raghavan, S (2021) Molybdenum and Tungsten Di-sulfides: First Principles Investigation of Adatom Attachment and Diffusion on c-plane Alpha Sapphire and Correlation with Growth. In: Crystal Growth and Design, 22 (8). pp. 4708-4720.
Hsieh, K and Kochat, V and Biswas, T and Tiwary, CS and Mishra, A and Ramalingam, G and Jayaraman, A and Chattopadhyay, K and Raghavan, S and Jain, M and Ghosh, A (2021) Spontaneous Time-Reversal Symmetry Breaking at Individual Grain Boundaries in Graphene. In: Physical Review Letters, 126 (20).
Ravindra, P and Chaudhary, R and Athresh, E and Vura, S and Raghavan, S and Ranjan, R and Majumdar, K and Avasthi, S (2021) Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate. In: Semiconductor Science and Technology, 36 (5).
Vura, S and Jeyaselvan, V and Biswas, R and Raghunathan, V and Selvaraja, SK and Raghavan, S (2021) Epitaxial BaTiO3on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer. In: ACS Applied Electronic Materials, 3 (2). pp. 687-695.
Charan, VS and Vura, S and Muralidharan, R and Raghavan, S and Nath, DN (2021) Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon. In: IEEE Electron Device Letters, 42 (4). pp. 497-500.
Kumari, K and Vura, S and Raghavan, S and Avasthi, S (2021) Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing. In: Materials Letters, 285 .
Solanke, SV and Soman, R and Rangarajan, M and Raghavan, S and Nath, DN (2021) UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction. In: Sensors and Actuators, A: Physical, 317 .
Subhani, KN and Remesh, N and S, N and Raghavan, S and R, M and Nath, DN and Bhat, KN (2021) Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices. In: Solid-State Electronics, 186 .
Nittala, PVK and Remesh, N and Niranjan, S and Tasneem, S and Raghavan, S and Muralidharan, R and Nath, DN and Sen, P (2020) Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader. In: IEEE Transactions on Components, Packaging and Manufacturing Technology, 10 (2). pp. 339-342.
Rathkanthiwar, S and Kalra, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111). In: IEEE Transactions on Electron Devices, 67 (10). pp. 4281-4287.
Shankar, B and Shikha, S and Singh, A and Kumar, J and Soni, A and Dutta Gupta, S and Raghavan, S and Shrivastava, M (2020) Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress. In: IEEE Transactions on Device and Materials Reliability, 20 (3). pp. 562-569.
Muazzam, UU and Raghavan, MS and Pratiyush, AS and Muralidharan, R and Raghavan, S and Nath, DN and Shivashankar, SA (2020) High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition. In: Journal of Alloys and Compounds, 828 .
Rathkanthiwar, S and Kalra, A and Remesh, N and Bardhan, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111). In: Journal of Applied Physics, 127 (21).
Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.
Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.
Ansh, A and Shrivastava, M and Kumar, J and Sheoran, G and Variar, HB and Mishra, R and Kuruva, H and Meersha, A and Mishra, A and Raghavan, S (2020) Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs. In: IEEE Transactions on Electron Devices, 67 (2). pp. 717-724.
Ansh, . and Kumar, J and Sheoran, G and Mishra, R and Raghavan, S and Shrivastava, M (2020) Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering. In: IEEE Transactions on Electron Devices, 67 (1). pp. 383-388.
Balasubramanian, K and Chandrasekar, H and Raghavan, S (2020) Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates. In: Physica Status Solidi (A) Applications and Materials Science, 217 (16).
Shankar, B and Raghavan, S and Shrivastava, M (2020) Distinct Failure Modes of AlGaN/GaN HEMTs under ESD Conditions. In: IEEE Transactions on Electron Devices, 67 (4). pp. 1567-1574.
Kalra, A and Rathkanthiwar, S and Muralidharan, R and Raghavan, S and Nath, DN (2020) Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes. In: Semiconductor Science and Technology, 35 (3).
Menon, PS and Jamil, NA and Mei, GS and Zain, ARM and Hewak, DW and Huang, CC and Mohamed, MA and Majlis, BY and Mishra, RK and Raghavan, S and Bhat, N (2020) Multilayer CVD-Graphene and MoS ethanol sensing and characterization using kretschmann-based SPR. In: IEEE Journal of the Electron Devices Society, 8 . pp. 1227-1235.
Muazzam, UU and Chavan, P and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optical Properties of Mist CVD Grown α-Ga2O3. In: IEEE Photonics Technology Letters, 32 (7). pp. 422-425.
Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .
Balasubramanian, K and Biswas, T and Ghosh, P and Suran, S and Mishra, A and Mishra, R and Sachan, R and Jain, M and Varma, M and Pratap, R and Raghavan, S (2019) Reversible defect engineering in graphene grain boundaries. In: Nature Communications, 10 (1).
Sunny, S and Baby, A and James, BL and Balaji, D and Aparna, NV and Rana, MH and Gurpur, P and Skandarajah, A and D�Ambrosio, M and Ramanjinappa, RD and Mohan, SP and Raghavan, N and Kandasarma, U and Sangeetha, N and Raghavan, S and Hedne, N and Koch, F and Fletcher, DA and Selvam, S and Kollegal, M and Praveen Birur, N and Ladic, L and Suresh, A and Pandya, HJ and Kuriakose, MA (2019) A smart tele-cytology point-of-care platform for oral cancer screening. In: PLoS ONE, 14 (11).
Singh, VK and Taya, P and Jana, D and Tyagi, R and Raghavan, S and Sharma, TK (2019) On the determination of alloy composition using optical spectroscopy in MOVPE grown InGaN layers on Si(111). In: Superlattices and Microstructures, 134 .
Ghosh, P and Paria, D and Balasubramanian, K and Ghosh, A and Narayanan, R and Raghavan, S (2019) Directed Microwave-Assisted Self-Assembly of Au–Graphene–Au Plasmonic Dimers for SERS Applications. In: Advanced Materials Interfaces, 6 (18).
Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.
Dhar, Sukanya and Kumar, Kranthi V and Choudhury, Tanushree H and Shivashankar, SA and Raghavan, S (2016) Chemical vapor deposition of MoS2 layers from Mo-S-C-O-H system: thermodynamic modeling and validation. In: PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 18 (22). pp. 14918-14926.
Anand, Anuranjan and Das Gupta, Aindrilla and Sudha, S and Raghavan, S and Chandrah, Sharat H (1998) A search for additional X-linked genes affecting sex determination in Drosophila melanogaster. In: Journal of Genitics, 77 (1). pp. 27-36.
Brahmachari, SK and Meera, G and Sarkar, PS and Balagurumoorthy, P and Tripathi, J and Raghavan, S and Shaligram, U and Pataskar, S (1995) Simple repetitive sequences in the genome: structure and functional significance. In: Electrophoresis, 16 (9). pp. 1705-1714.
Raghavan, S and Subba Rao, GSR (1992) A novel anion induced cope rearrangement. In: Tetrahedron Letters, 33 (1). pp. 119-120.
Raghavan, S and Hajra, JP and Abraham, KP and Iyengar, GNK (1991) Terminal solid solubilities at 900–1000°C in the magnesium oxide-zinc oxide system measured using a magnesium fluoride solid-electrolyte galvanic cell. In: Thermochimica Acta, 189 (1). pp. 151-158. (In Press)
Iyengar, GNK and Abraham, KP and Raghavan, S (1985) Determination of the thermodynamic properties of xMgO + (1 x)MnO (s, sln) from a solid-electrolyte galvanic cell in the temperature range 1163 to 1318 K. In: The Journal of Chemical Thermodynamics, 17 (6). pp. 585-591.
