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Banerjee, Nirupam and Parui, Jayanta and Krupanidhi, SB (2010) Wide Ranged La Modification in CCTO Ceramics Through Sol-Gel: Effect on Microstructure and Dielectric Properties. In: International Conference on Electroceramics (ICE-2009), DEC 13-17, 2009 , Delhi, INDIA,, pp. 86-98.
Parui, Jayanta and Murali, Banavoth and Biradar, Balaji and Krupanidhi, S B (2018) Oxygen deficiency induced nickel based oxides for UV & IR sensitive photo-conductive devices. In: MATERIALS RESEARCH BULLETIN, 107 . pp. 321-327.
Choudhury, Palash Roy and Parui, Jayanta and Chiniwar, Santosh and Krupanidhi, SB (2015) Preferential polarization and its reversal in polycrystalline BiFeO3/La0.5Sr0.5CoO3 heterostructures. In: SOLID STATE COMMUNICATIONS, 208 . pp. 15-20.
Murali, Banavoth and Parui, Jayanta and Madhuri, M and Krupanidhi, SB (2015) An insight to the low temperature conduction mechanism of c-axis grown Al-doped ZnO, a widely used transparent conducting oxide. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48 (1).
Saranya, D and Parui, Jayanta and Krupanidhi, SB (2013) Electrocaloric Effect in 0.85PMN-0.15PT Thin Films Deposited by Pulsed Laser Deposition. In: FERROELECTRICS, 453 (1). pp. 38-43.
Saranya, D. and John, Neena S. and Parui, Jayanta and Krupanidhi, SB (2012) Studies on Field Dependent Domain Structures in Multi-Grained 0.85PbMg(1/3)Nb(2/3)O3-0.15PbTiO(3) Thin Films by Scanning Force Microscopy. In: Integrated Ferroelectrics: An International Journal, 134 (1). pp. 39-47.
John, Neena S and Saranya, D and Parui, Jayanta and Krupanidhi, SB (2011) Effect of oxygen pressure on the grain and domain structure of polycrystalline 0.85PbMg(1/3)Nb(2/3)O(3)-0.15PbTiO(3) thin films studied by scanning probe microscopy. In: Journal of Physics D: Applied Physics, 44 (41).
Parui, Jayanta and Krupanidhi, SB (2010) Effect of La modification on antiferroelectricity and dielectric phase transition in sol-gel grown PbZrO3 thin films. In: Solid State Communications, 150 (37-38). pp. 1755-1759.
Singh, Jitendra and Kalghatgi, AT and Parui, Jayanta and Krupanidhi, SB (2010) High-temperature dielectric response in pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films. In: Journal of Applied Physics, 108 (5).
Aparna, Shetty and Jali, VM and Sanjeev, Ganesh and Parui, Jayanta and Krupanidhi, SB (2010) Dielectric properties of electron irradiated PbZrO3 thin films. In: Bulletin of Materials Science, 33 (3). pp. 191-196.
Parui, Jayanta and Krupanidhi, SB (2008) Electrocaloric effect in antiferroelectric PbZrO3 thin films. In: Physica Status Solidi (RRL) - Rapid Research Letters, 2 (5). pp. 230-232.
Parui, Jayanta and Krupanidhi, SB (2008) Slim P‐E hysteresis loop and anomalous dielectric response in sol-gel derived antiferroelectric PbZrO3 thin films. In: Journal of Applied Physics, 104 (2).
Parui, Jayanta and Krupanidhi, SB (2008) Enhancement of charge and energy storage in sol-gel derived pure and La-modified $PbZrO_3$ thin films. In: Applied Physics Letters, 92 (19). pp. 192901-1.
Parui, Jayanta and Krupanidhi, SB (2008) Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films. In: Applied Physics Letters, 92 (19). p. 192901.
Parui, Jayanta and Krupanidhi, SB (2006) Dielectric properties of (110) oriented $PbZrO_3$ and La-modified $PbZrO_3$ thin films grown by sol-gel process on $Pt111/Ti/SiO_2/Si$ substrate. In: Journal of Applied Physics, 100 (4). 044102 (9 pages).
Kumari, Neelam and Parui, Jayanta and Varma, KBR and Krupanidhi, SB (2006) CV studies on metal-ferroelectric bismuth vanadate $(Bi{_2}VO{_5}.{_5})$ semiconductor structure. In: Solid State Communications, 137 (10). pp. 566-569.
Kumari, Neelam and Parui, Jayanta and Varma, KBR and Krupanidhi, SB (2006) C–V studies on metal–ferroelectric bismuth vanadate $(Bi_2VO_{5.5})$–semiconductor structure. In: Solid State Communications, 137 (10). pp. 566-569.
Parui, Jayanta and Krupanidhi, SB (2006) Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti/SiO2/Si substrate. In: Journal of Applied Physics , 100 (4). 044102-044102.
