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Conference Proceedings

Krishna, N P Vamsi and Ramesh, Nayana and Mohan, Nagaboopathy and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N and Sen, Prosenjit (2017) Gallium Nitride transistor on glass using epoxy mediated substrate transfer technology. In: 19th IEEE Electronics Packaging Technology Conference (EPTC), DEC 06-09, 2017, Singapore, SINGAPORE.

Journal Article

Kalra, Anisha and Muazzam, Usman Ul and Muralidharan, R and Raghavan, Srinivasan and Nath, Digbijoy N (2022) The road ahead for ultrawide bandgap solar-blind UV photodetectors. In: Journal of Applied Physics, 131 (15). ISSN 0021-8979

Remesh, Nayana and Kumar, Sandeep and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE .

Kumar, Sandeep and Soman, Rohith and Pratiyush, Anamika Singh and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Performance Comparison Between beta-Ga2O3 and GaN HEMTs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8). pp. 3310-3317.

Kalra, Anisha and Rathkanthiwar, Shashwat and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N (2019) Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (15). pp. 1237-1240.

Solanke, Swanand V and Rathkanthiwar, Shashwat and Kalra, Anisha and Mech, Roop Kumar and Rangarajan, Muralidharan and Raghavan, Srinivasan and Nath, Digbijoy N (2019) Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and beta-In2Se3/GaN. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (7).

Pratiyush, Anamika Singh and Ul Muazzam, Usman and Kumar, Sandeep and Vijayakumar, P and Ganesamoorthy, S and Subramanian, N and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Optical Float-Zone Grown Bulk beta-Ga2O3-Based Linear MSM Array of UV-C Photodetectors. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (12). pp. 923-926.

Mech, Roop K and Solanke, Swanand V and Mohta, Neha and Rangarajan, Muralidharan and Nath, Digbijoy N (2019) In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (11). pp. 905-908.

Remesh, Nayana and Mohan, Nagaboopathy and Kumar, Sandeep and Prabhu, Prabhu and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 613-618.

Kumar, Sandeep and Kumar, Himanshu and Vura, Sandeep and Pratiyush, Anamika Singh and Charan, Vanjari Sai and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (3). pp. 1230-1235.

Pratiyush, Anamika Singh and Xia, Zhanbo and Kumar, Sandeep and Zhang, Yuewei and Joishi, Chandan and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2018) MBE-Grown beta-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio similar to 10(7). In: IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (23). pp. 2025-2028.

Rathkanthiwar, Shashwat and Kaira, Anisha and Muralidharan, Rangarajan and Nath, Digbijoy N and Raghavan, Srinivasan (2018) Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors. In: JOURNAL OF CRYSTAL GROWTH, 498 . pp. 35-42.

Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.

Kalra, Anisha and Vura, Sandeep and Rathkanthiwar, Shashwat and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N (2018) Demonstration of high-responsivity epitaxial beta-Ga2O3/GaN metal-heterojunction-metal broadband UV-A/UV-C detector. In: APPLIED PHYSICS EXPRESS, 11 (6).

Singh, Vikash K and Nath, Digbijoy N (2018) Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (2).

Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).

Rathkanthiwar, Shashwat and Kalra, Anisha and Solanke, Swanand V and Mohta, Neha and Muralidharan, Rangarajan and Raghavan, Srinivasan and Nath, Digbijoy N (2017) Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors. In: JOURNAL OF APPLIED PHYSICS, 121 (16).

Pratiyush, Anamika Singh and Krishnamoorthy, Sriram and Solanke, Swanand Vishnu and Xia, Zhanbo and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2017) High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector. In: APPLIED PHYSICS LETTERS, 110 (22).

Pratiyush, Anamika Singh and Krishnamoorthy, Sriram and Solanke, Swanand Vishnu and Xia, Zhanbo and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2017) High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector. In: APPLIED PHYSICS LETTERS, 110 (22).

Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.

Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.

Kumar, Sandeep and Pratiyush, Anamika Singh and Dolmanan, Surani B and Tripathy, Sudhiranjan and Muralidharan, Rangarajan and Nath, Digbijoy N (2017) UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 10(7). In: APPLIED PHYSICS LETTERS, 111 (25).

Chandrasekar, Hareesh and Nath, Digbijoy N (2016) Electron mobility in few-layer MoxW1-xS2. In: MATERIALS RESEARCH EXPRESS, 2 (9).

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Nath, Digbijoy N and Bhat, Navakanta (2016) Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET. In: IEEE ELECTRON DEVICE LETTERS, 37 (1). pp. 119-122.

Chandrasekar, Hareesh and Ganapathi, Kolla Lakshmi and Bhattacharjee, Shubhadeep and Bhat, Navakanta and Nath, Digbijoy N (2016) Optical-Phonon-Limited High-Field Transport in Layered Materials. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (2). pp. 767-772.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Nath, Digbijoy N and Bhat, Navakanta (2016) Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (6). pp. 2556-2562.

Chandrasekar, Hareesh and Nath, Digbijoy N (2015) Electron mobility in few-layer MoxW1-xS2. In: MATERIALS RESEARCH EXPRESS, 2 (9).