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Pratiyush, AS and Krishnamoorthy, S and Muralidharan, R and Rajan, S and Nath, DN (2018) Advances in Ga2O3 solar-blind UV photodetectors. [Book Chapter]
Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Gowrisankar, A and Vanjari, SC and Bardhan, A and Venugopalarao, A and Chandrasekar, H and Muralidharan, R and Raghavan, S and Nath, DN (2022) AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore.
Kalra, A and Rathkanthiwar, S and Remesh, N and Muralidharan, R and Nath, D and Raghavan, S (2020) Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang; Malaysia.
Agrawal, M and Jain, A and Mehta, BR and Muralidharan, R (2020) Plasma Assisted Molecular Beam Epitaxy Grown GaN Nanowires On Si (211) Substrates for UV Sensing Applications. In: 5th IEEE International Conference on Emerging Electronics, ICEE 2020, 26 - 28 November 2020, New Delhi.
Kumar, S and Narayanan, G and Muralidharan, R (2020) Current spinning and signal conditioning circuit for high-performance magnetic field sensing. In: 9th IEEE Power India International Conference, PIICON 2020, 28 February- 1 March, 2020, SonePat, India.
Agrawal, M and Mehta, BR and Muralidharan, R (2019) Effect of surface treatments on the evolution of microstructures in gan thin films and gan/algan/ gan heterostructures. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 187-190.
Mech, RK and Mohta, N and Muralidharan, R and Nath, DN (2019) Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer α -InSe. In: 2019 Device Research Conference (DRC), 23-26 June 2019, Ann Arbor, MI, USA, pp. 189-190.
Soman, R and Sharma, M and Ramesh, N and Nath, D and Muralidharan, R and Bhat, KN and Raghavan, S and Bhat, N (2018) (Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate. In: Symposium on High Purity and High Mobility Semiconductors 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 161-168.
Badal, Ashutosh and Narayanan, G and Muralidharan, R (2017) Evaluation of on-state resistance in gallium nitride based power electronic switches. In: 2017 IEEE International Conference on Signal Processing, Informatics, Communication and Energy Systems, SPICES 2017, 8 - 10 August 2017, Kollam, pp. 1-6.
Naik, KG and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting, MAR 28-APR 01, 2005, San Francisco.
Saquib, T and Akyol, F and Ozden, H and Somaiah, N and Sahoo, J and Muralidharan, R and Nath, DN (2024) Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction. In: Journal of Applied Physics, 135 (6).
Ul Muazzam, U and Muralidharan, R and Raghavan, S and Nath, DN (2023) Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD. In: Optical Materials, 145 .
Baby, R and Mandal, M and Roy, SK and Bardhan, A and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing. In: Microelectronic Engineering, 282 .
Khan, MA and Muralidharan, R and Chandrasekar, H (2023) Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs. In: Semiconductor Science and Technology, 38 (3).
Baby, R and Roy, SK and Tripathy, S and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs. In: Physica Status Solidi (A) Applications and Materials Science .
Niranjan, S and Muralidharan, R and Sen, P and Nath, DN (2022) Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate. In: IEEE Transactions on Electron Devices, 69 (8). pp. 4212-4217.
Charan, VS and Muralidharan, R and Raghavan, S and Nath, DN (2022) 20.2 GHz-µm fT–LG in InAlN/GaN-on-Si High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Vura, S and Ul Muazzam, U and Kumar, V and Vanjari, SC and Muralidharan, R and Digbijoy, N and Nukala, P and Raghavan, S (2022) Monolithic Epitaxial Integration of β-Ga2O3with 100 Si for Deep Ultraviolet Photodetectors. In: ACS Applied Electronic Materials, 4 (4). pp. 1619-1625.
Kalra, Anisha and Muazzam, Usman Ul and Muralidharan, R and Raghavan, Srinivasan and Nath, Digbijoy N (2022) The road ahead for ultrawide bandgap solar-blind UV photodetectors. In: Journal of Applied Physics, 131 (15). ISSN 0021-8979
Niranjan, S and Rao, A and Muralidharan, R and Sen, P and Nath, DN (2022) Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1014-1019.
Charan, VS and Vura, S and Muralidharan, R and Raghavan, S and Nath, DN (2021) Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon. In: IEEE Electron Device Letters, 42 (4). pp. 497-500.
Kumar, S and Muralidharan, R and Narayanan, G (2021) Hall-effect sensors based on ALGAN/GAN heterojunctions on Si substrates for a wide temperature range. In: IET Circuits, Devices and Systems .
Mohta, N and Rao, A and Remesh, N and Muralidharan, R and Nath, DN (2021) An artificial synaptic transistor using an α-In2Se3van der Waals ferroelectric channel for pattern recognition. In: RSC Advances, 11 (58). pp. 36901-36912.
Nittala, PVK and Remesh, N and Niranjan, S and Tasneem, S and Raghavan, S and Muralidharan, R and Nath, DN and Sen, P (2020) Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader. In: IEEE Transactions on Components, Packaging and Manufacturing Technology, 10 (2). pp. 339-342.
Rathkanthiwar, S and Kalra, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111). In: IEEE Transactions on Electron Devices, 67 (10). pp. 4281-4287.
Muazzam, UU and Raghavan, MS and Pratiyush, AS and Muralidharan, R and Raghavan, S and Nath, DN and Shivashankar, SA (2020) High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition. In: Journal of Alloys and Compounds, 828 .
Rathkanthiwar, S and Kalra, A and Remesh, N and Bardhan, A and Muralidharan, R and Nath, DN and Raghavan, S (2020) Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111). In: Journal of Applied Physics, 127 (21).
Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.
Remesh, N and Mohan, N and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 67 (6). pp. 2311-2317.
Niranjan, S and Guiney, I and Humphreys, CJ and Sen, P and Muralidharan, R and Nath, DN (2020) Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 38 (3).
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Kumar, S and Vura, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On-Current > 0.5 A mm�1. In: Physica Status Solidi (A) Applications and Materials Science .
Mech, RK and Mohta, N and Chatterjee, A and Selvaraja, SK and Muralidharan, R and Nath, DN (2020) High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3. In: Physica Status Solidi (A) Applications and Materials Science, 217 (5).
Mohta, N and Mech, RK and Sanjay, S and Muralidharan, R and Nath, DN (2020) Artificial Synapse Based on Back-Gated MoS2 Field-Effect Transistor with High-k Ta2O5 Dielectrics. In: Physica Status Solidi (A) Applications and Materials Science .
Kalra, A and Rathkanthiwar, S and Muralidharan, R and Raghavan, S and Nath, DN (2020) Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes. In: Semiconductor Science and Technology, 35 (3).
Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .
Muazzam, UU and Chavan, P and Raghavan, S and Muralidharan, R and Nath, DN (2020) Optical Properties of Mist CVD Grown α-Ga2O3. In: IEEE Photonics Technology Letters, 32 (7). pp. 422-425.
Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .
Jangir, Suresh K and Malik, Hitendra K and Kumar, Anand and Rao, D VSridhar and Muralidharan, R and Mishra, Puspashree (2019) Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate. In: JOURNAL OF ELECTRONIC MATERIALS, 48 (4). pp. 2174-2182.
Jangir, Suresh K and Malik, Hitendra K and Saho, Praveen and Muralidharan, R and Srinivasan, T and Mishra, Puspashree (2019) Electrical transport and gas sensing characteristics of dielectrophoretically aligned MBE grown catalyst free InAs nanowires. In: NANOTECHNOLOGY, 30 (10).
Kumar, S and Kumar, H and Vura, S and Pratiyush, AS and Charan, VS and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2019) Investigation of Ta 2 O 5 as an alternative high-k dielectric for InAlN/GaN MOS-HEMT on Si. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1230-1235.
Kumar, S and Pratiyush, AS and Dolmanan, SB and Tan, HR and Tripathy, S and Muralidharan, R and Nath, DN (2019) Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1- xN/GaN High Electron Mobility Transistor Structures on Si (111). In: ACS Applied Electronic Materials, 1 (3). pp. 340-345.
Remesh, N and Kumar, S and Guiney, I and Humphreys, CJ and Raghavan, S and Muralidharan, R and Nath, DN (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: Physica Status Solidi (A) Applications and Materials Science .
Soman, Rohith and Sharma, Manish and Ramesh, Nayana and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta (2018) Buried channel normally-off AIGaN/GaN MOS-HEMT with a p-n junction in GaN buffer. In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9).
Pratiyush, AS and Krishnamoorthy, S and Kumar, S and Xia, Z and Muralidharan, R and Rajan, S and Nath, DN (2018) Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. In: Japanese Journal of Applied Physics, 57 (6).
Jaiswal, Piyush and Ul Muazzam, Usman and Pratiyush, Anamika Singh and Mohan, Nagaboopathy and Raghavan, Srinivasan and Muralidharan, R and Shivashankar, S A and Nath, Digbijoy N (2018) Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics. In: APPLIED PHYSICS LETTERS, 112 (2).
Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.
Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.
Jangir, Suresh K and Malik, Hitendra K and Dalal, Sandeep and Pandey, Akhilesh and Srinivasan, T and Muraleedharan, K and Muralidharan, R and Mishra, Puspashree (2017) X-ray pole figure analysis of catalyst free InAs nanowires on Si substrate. In: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 225 . pp. 108-114.
Jangir, Suresh K and Malik, Hitendra K and Dalal, Sandeep and Pandey, Akhilesh and Srinivasan, T and Muraleedharan, K and Muralidharan, R and Mishra, Puspashree (2017) X-ray pole figure analysis of catalyst free InAs nanowires on Si substrate. In: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 225 . pp. 108-114.
Kaushik, JK and Balakrishnan, VR and Mongia, D and Kumar, U and Dayal, S and Panwar, BS and Muralidharan, R (2016) Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors. In: THIN SOLID FILMS, 612 . pp. 147-152.
Mishra, MK and Sharma, RK and Tyagi, R and Manchanda, R and Pandey, AK and Thakur, OP and Muralidharan, R (2016) Large negative magnetoresistance induced by interplay between smooth disorder and antidots in AlGaN/GaN HEMT structures. In: MATERIALS RESEARCH EXPRESS, 3 (4).
Rao, Sridhara DV and Sankarasubramanian, R and Kumar, Deepak and Singh, V and Bhat, Mahadeva K and Mishra, P and Vinayak, S and Srinivasan, T and Tyagi, R and Muraleedharan, K and Muralidharan, R and Banerjee, D (2016) Microstructural and Compositional Characterisation of Electronic Materials. In: DEFENCE SCIENCE JOURNAL, 66 (4, SI). pp. 341-352.
Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R (2011) Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells. In: BULLETIN OF MATERIALS SCIENCE, 34 (7). pp. 1645-1648.
Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: MRS Proceedings, 872 . J18.18.
Naik, Gopalakrishna K and Rao, KSRK and Srinivasanb, T and Muralidharan, R and Mehta, SK (2004) Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study. In: Solid State Communications., 132 (12). pp. 805-808.
Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2004) Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 353 (3-4). pp. 205-209.
Patnaik, LM and Ramakrishna, AK and Muralidharan, R (1997) Distributed Algorithms for Mobile Hosts. In: IEE Proceedings of Computers and Digital Techniques, 144 (2). pp. 49-56.
