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Number of items: 28.

Conference Proceedings

Kumar, Arvind and Mondal, Sandip and Rao, K S R Koteswara (2018) Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.

Mondal, Sandip (2018) Electrical Behaviour of Fully Solution Processed HfO2 (MOS) in Presence of Different light illumination. In: 62nd DAE Solid State Physics Symposium, DEC 26-30, 2017, Mumbai, INDIA.

Mondal, Sandip and Kumar, Arvind (2018) Fully solution processed Al-TiO2-Si (MIS) structured Photo-detector. In: 2nd International Conference on Condensed Matter and Applied Physics (ICC), NOV 24-25, 2017, Bikaner, INDIA.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara K S R (2017) Band Alignment and Electrical Investigations of Ultra-Thin Al2O3 on Si by E-beam Evaporation. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

Mondal, Sandip and Venkataraman, V (2017) Flash Memory TFT Based on Fully Solution Processed Oxide. In: 75th Annual Device Research Conference (DRC), JUN 25-28, 2017, Univ Notre Dame, South Bend, IN.

Gyanan, Gyanan and Mondal, Sandip and Kumar, Arvind (2017) Impact of Time-dependent Annealing on TiO2 Films for CMOS application. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

Mondal, Sandip and Kumar, Arvind and Rao, Koteswara K S R and Venkataraman, V (2017) Scaling Behavior of Fully Spin-coated TFT. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

Mondal, Sandip and Kumar, Arvind and Rao, Koteswara KSR and Venkataraman, V (2016) Highly Reliable Spin-coated Titanium Dioxide Dielectric. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.

Kumar, Arvind and Mondal, Sandip and Rae, Koteswara KSR (2016) Zirconium doped TiO2 thin films: A promising dielectric layer. In: International Conference on Condensed Matter and Applied Physics (ICC), OCT 30-31, 2015, Bikaner, INDIA.

Mondal, Sandip and Venkataraman, V (2015) All Inorganic Spin-coated Nanoparticle Memory Device. In: 2015 73rd Annual Device Research Conference (DRC), JUN 21-24, 2015, Ohio State Univ, Columbus, OH, pp. 129-130.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2015) Electrical Study of Al/HfO2/p-Si (100) Gate Stack. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2015) High-kappa TiO2 Thin Film Prepared by Sol-Gel Spin-Coating Method. In: 59th DAE Solid State Physics Symposium, DEC 16-20, 2014, VIT Univ, Vellore, INDIA.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2015) High-kappa TiO2 Thin Film Prepared by Sol-Gel Spin-Coating Method. In: 59th DAE Solid State Physics Symposium, DEC 16-20, 2014, VIT Univ, Vellore, INDIA.

Journal Article

Aman, Gyanan and Khatei, Jayakrishna and Mondal, Sandip and Kumar, Arvind and Mallik, Ramesh Chandra (2019) Optical sensing of ultra-trace As3+ species using 2-mercaptoethanol capped CdTe Quantum Dots in aqueous medium. In: MATERIALS RESEARCH EXPRESS, 6 (12).

Mondal, Sandip and Venkataraman, V (2019) Low temperature below 200 degrees C solution processed tunable flash memory device without tunneling and blocking layer. In: NATURE COMMUNICATIONS, 10 .

Mondal, Sandip and Venkataraman, V (2019) All inorganic solution processed three terminal charge trapping memory device. In: APPLIED PHYSICS LETTERS, 114 (17).

Kumar, Arvind and Mondal, Sandip and Rao, KSR Koteswara (2018) DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment. In: JOURNAL OF ELECTRONIC MATERIALS, 47 (2). pp. 955-960.

Kumar, Arvind and Mondal, Sandip and Rao, K S R, Koteswara (2017) Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy. In: APPLIED PHYSICS LETTERS, 110 (13).

Kumar, Arvind and Mondal, Sandip and Rao, K S R , Koteswara (2017) Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications. In: JOURNAL OF APPLIED PHYSICS, 121 (8).

Mondal, Sandip and Venkataraman, V (2017) Tunable electron affinity with electronic band alignment of solution processed dielectric. In: APPLIED PHYSICS LETTERS, 111 (4).

Mondal, Sandip and Venkataraman, V (2016) All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices. In: IEEE ELECTRON DEVICE LETTERS, 37 (4). pp. 396-399.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2016) Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 27 (5). pp. 5264-5270.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2016) Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics. In: APPLIED SURFACE SCIENCE, 370 . pp. 373-379.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara K S R (2016) Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 122 (12).

Gyanan, * and Mondal, Sandip and Kumar, Arvind (2016) Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics. In: SUPERLATTICES AND MICROSTRUCTURES, 100 . pp. 876-885.

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2015) DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating. In: AIP ADVANCES, 5 (11).

Kumar, Arvind and Mondal, Sandip and Kumar, Girish S and Rao, Koteswara KSR (2015) High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures. In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 40 . pp. 77-83.

Editorials/Short Communications

Mondal, Sandip and Venkataraman, V (2016) Fully Spin-coated Memory TFT. In:

This list was generated on Thu Apr 25 15:36:55 2024 IST.