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Journal Article

Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2018) Temperature dependent electrical properties of AlN/Si heterojunction. In: JOURNAL OF APPLIED PHYSICS, 124 (20).

Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2016) Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE. In: JOURNAL OF CRYSTAL GROWTH, 433 . pp. 74-79.

Mukundan, Shruti and Roul, Basanta and Shetty, Arjun and Chandan, Greeshma and Mohan, Lokesh and Krupanidhi, SB (2015) Enhanced UV detection by non-polar epitaxial GaN films. In: AIP ADVANCES, 5 (12).

Sinha, Neeraj and Roul, Basanta and Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Jali, VM and Krupanidhi, SB (2015) Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. In: MATERIALS RESEARCH BULLETIN, 61 . pp. 539-543.

Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Roul, Basanta and Krupanidhi, SB and Shinde, Satish and Nanda, KK and Maiti, R and Ray, SK (2015) High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE. In: AIP ADVANCES, 5 (3).

Shetty, Arjun and Roul, Basanta and Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Vinoy, KJ and Krupanidhi, SB (2015) Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes. In: AIP ADVANCES, 5 (9).

Chandan, Greeshma and Mukundan, Shruti and Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2015) Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias. In: JOURNAL OF APPLIED PHYSICS, 118 (2).

Mohan, Lokesh and Chandan, Greeshma and Mukundan, Shruthi and Roul, Basanta and Krupanidhi, SB (2014) Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures. In: JOURNAL OF APPLIED PHYSICS, 116 (23).

Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Roul, Basanta and Krupanidhi, SB (2014) Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy. In: JOURNAL OF APPLIED PHYSICS, 116 (20).