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Ling, Zhi-Peng and Majumdar, Kausik and Sakar, Soumya and Mathew, Sinu and Zhu, Jun-Tao and Gopinadhan, K and Venkatesan, T and Ang, Kah-Wee (2016) Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors. In: International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), APR 25-27, 2016, Hsinchu, TAIWAN.
Majumdar, Kausik and Kallat, Sangeeth and Bhat, Navakanta (2011) Graphene transistors for CMOS applications: opportunities and challenges. In: International Workshop on Physics of Semiconductor Devices, 19-22 December, 2011., IIT, Kanpur, India.
Medury, AdityaSankar and Majumdar, Kausik and Bhat, Navakanta and Bhat, KN (2010) A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs. In: 3rd IEEE International Nanoelectronics Conference, JAN 03-08, 2010 , City Univ Hong Kong, pp. 1134-1135.
Majumdar, Kausik and Murali VRM, Kota and Bhat, Navakanta and Xia, Fengnian and Lin, Yu-Ming (2010) High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors. In: International Electron Devices Meeting (IEDM), DEC 06-08, 2010, San Francisco, CA.
Abraham, Nithin and Watanabe, Kenji and Taniguchi, Takashi and Majumdar, Kausik (2022) A High-Quality Entropy Source Using van der Waals Heterojunction for True Random Number Generation. In: ACS Nano, 16 (4). pp. 5898-5908. ISSN 1936-0851
Murali, Krishna and Abraham, Nithin and Das, Sarthak and Kallatt, Sangeeth and Majumdar, Kausik (2019) Highly Sensitive, Fast Graphene Photodetector with Responsivity >10(6) A/W Using a Floating Quantum Well Gate. In: ACS APPLIED MATERIALS & INTERFACES, 11 (33). pp. 30010-30018.
Das, Sarthak and Gupta, Garima and Majumdar, Kausik (2019) Layer degree of freedom for excitons in transition metal dichalcogenides. In: PHYSICAL REVIEW B, 99 (16).
Dandu, Medha and Biswas, Rabindra and Das, Sarthak and Kallatt, Sangeeth and Chatterjee, Suman and Mahajan, Mehak and Raghunathan, Varun and Majumdar, Kausik (2019) Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure. In: ACS NANO, 13 (4). pp. 4795-4803.
Maji, Tuhin Kumar and Vaibhav, Kumar and Pal, Samir Kumar and Majumdar, Kausik and Adarsh, KV and Karmakar, Debjani (2019) Intricate modulation of interlayer coupling at the graphene oxide/MoSe2 interface: Application in time-dependent optics and device transport. In: PHYSICAL REVIEW B, 99 (11).
Gupta, Garima and Majumdar, Kausik (2019) Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides. In: PHYSICAL REVIEW B, 99 (8).
Mahajan, Mehak and Murali, Krishna and Kawatra, Nikhil and Majumdar, Kausik (2019) Gate-Controlled Large Resistance Switching Driven by Charge-Density Wave in 1T-TaS2/2H-MoS2 Heterojunctions. In: PHYSICAL REVIEW APPLIED, 11 (2).
Murali, Krishna and Majumdar, Kausik (2018) Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (10). pp. 4141-4148.
Murali, Krishna and Dandu, Medha and Das, Sarthak and Majumdar, Kausik (2018) Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio. In: ACS APPLIED MATERIALS & INTERFACES, 10 (6). pp. 5657-5664.
Kallatt, Sangeeth and Nair, Smitha and Majumdar, Kausik (2018) Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity. In: SMALL, 14 (3).
Krishna, Murali and Kallatt, Sangeeth and Majumdar, Kausik (2018) Substrate effects in high gain, low operating voltage SnSe2 photoconductor. In: NANOTECHNOLOGY, 29 (3).
Gupta, Garima and Kallatt, Sangeeth and Majumdar, Kausik (2017) Direct observation of giant binding energy modulation of exciton complexes in monolayer MoSe2. In: PHYSICAL REVIEW B, 96 (8).
Somvanshi, Divya and Kallatt, Sangeeth and Venkatesh, Chenniappan and Nair, Smitha and Gupta, Garima and Anthony, John Kiran and Karmakar, Debjani and Majumdar, Kausik (2017) Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance. In: PHYSICAL REVIEW B, 96 (20).
Somvanshi, Divya and Kallatt, Sangeeth and Venkatesh, Chenniappan and Nair, Smitha and Gupta, Garima and Anthony, John Kiran and Karmakar, Debjani and Majumdar, Kausik (2017) Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance. In: PHYSICAL REVIEW B, 96 (20).
Kallatt, Sangeeth and Umesh, Govindarao and Bhat, Navakanta and Majumdar, Kausik (2016) Photoresponse of atomically thin MoS2 layers and their planar heterojunctions. In: NANOSCALE, 8 (33). pp. 15213-15222.
Majumdar, Kausik and Datta, Suman and Rao, Satyavolu Papa (2016) Revisiting the Theory of Ferroelectric Negative Capacitance. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (5). pp. 2043-2049.
Kallatt, Sangeeth and Umesh, Govindarao and Majumdar, Kausik (2016) Valley-Coherent Hot Carriers and Thermal Relaxation in Monolayer Transition Metal Dichalcogenides. In: JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 7 (11). pp. 2032-2038.
Majumdar, Kausik and Kallatt, Sangeeth and Bhat, Navakanta (2012) High field carrier transport in graphene: Insights from fast current transient. In: APPLIED PHYSICS LETTERS, 101 (12).
Majumdar, Kausik and Konjady, Rajaram Shetty and Suryaprakash, Raj Tejas and Bhat, Navakanta (2011) Underlap Optimization in HFinFET in Presence of Interface Traps. In: IEEE Transactions on Nanotechnology, 10 (6). pp. 1249-1253.
Majumdar, Kausik and Bhat, Navakanta and Majhi, Prashant and Jammy, Raj (2010) Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit. In: IEEE Transactions on Electron Devices, 57 (9). pp. 2264-2273.
Majumdar, Kausik and Murali, Kota VRM and Bhat, Navakanta and Lin, Yu-Ming (2010) External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon. In: Nano Letters, 10 (8). pp. 2857-2862.
Majumdar, Kausik and Murali, Kota VRM and Bhat, Navakanta and Lin, Yu-Ming (2010) Intrinsic limits of subthreshold slope in biased bilayer graphene transistor. In: Applied Physics Letters, 96 (12).
