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Krupanidhi, SB and Hudait, MK and Modak, P and Hardikar, S and Kumar, Vikram and Agarwal, SK (1998) MOCVD epitaxy of GaAs/Ge heterostructures. In: International workshop on the Physics of Semiconductor Devices: IWPSD97, vol.1, 16-20 Dec. 1997, Delhi, India, pp. 262-270.
Bhat, HL and Kumar, Vikram and Agarwal, SK (1998) Recent investigations on the growth of antimony based semiconductors. In: SPIE: International workshop on Physics of Semiconductor Devices, 16-20 Dec 1997, Delhi, India, pp. 221-227.
Balasubramanian, S and Kumar, Vikram (1995) Hydrogen passivation of shallow dopants in InP studied by photoluminescence spectroscopy. In: Symposium Defect and Impurity Engineered Semiconductors and Devices, 17-21 April 1995, San Francisco, CA, USA, pp. 453-457.
Kumar, Vikram and Mohapatra, YN (1990) Characterization of defects in gallium arsenide. In: 1ST NATIONAL SEMINAR ON GAAS AND III-IV COMPOUND SEMICONDUCTORS, APR 29-30, 1988, KHARAGPUR, INDIA.
Arbade, Gajanan Kashinathrao and Kumar, Vikram and Tripathi, Vidisha and Menon, Aishwarya and Bose, Suryasarathi and Patro, T Umasankar (2019) Emblica officinalis-loaded poly(epsilon-caprolactone) electrospun nanofiber scaffold as potential antibacterial and anticancer deployable patch. In: NEW JOURNAL OF CHEMISTRY, 43 (19). pp. 7427-7440.
Pal, U and Piqueras, J and Dutta, PS and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (2008) Cathodoluminescence Spectroscopy For Evaluation Of Defect Passivation In GaSb. In: MRS Proceedings, 42 (1). pp. 92-99.
Nagapriya, KS and Raychaudhuri, AK and Kumar, Vikram and Jain, VK and Jalwania, CR (2003) Effect of ambient on the thermal parameters of a micromachined bolometer. In: Applied Physics Letters, 82 (16). pp. 2721-2723.
Gurumurthy, Suma and Bhat, HL and Kumar, Vikram (1999) Excellent rectifying characteristics in Au/n-CdTe diodes upon exposure to rf nitrogen plasma. In: Semiconductor Science and Technology, 14 (10). pp. 909-914.
Dutta, PS and Prasad, V and Bhat, HL and Kumar, Vikram (1996) Carrier compensation and scattering mechanisms in p-GaSb. In: Journal of Applied Physics, 80 (5). pp. 2847-2853.
Dutta, PS and Bhat, HL and Kumar, Vikram (1996) Modelling Temperature Distribution in Cylindrical Crystal Growth Furnaces. In: International Communications in Heat and Mass Transfer, 23 (3). pp. 377-386.
Gurumurthy, Suma and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumar, Vikram (1996) Shallow donor neutralization in CdTe:In by atomic hydrogen. In: Applied Physics Letters, 68 (17). pp. 2424-2426.
Rao, KSRK and Sreedhar, AK and Bhat, HL and Singh, RA and Dubey, GC and Kumar, Vikram (1996) Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates. In: Applied Physics Letters, 68 (11). pp. 1458-1460.
Dutta, PS and Bhat, HL and Kumar, Vikram and Sochinskii, NV and Dieguez, E (1996) Influence of arsenic concentration on the surface morphology and photoluminescence of LPE grown A1GaAsSb/GaSb with high aluminium content. In: Journal of Crystal Growth, 160 (1-2). pp. 177-180.
Dutta, PS and Bhat, HL and Kumar, Vikram (1995) Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects. In: Bulletin of Materials Science, 18 (7). pp. 865-874.
Dutta, PS and Bhat, HL and Kumar, Vikram (1995) Numerical analysis of melt-solid interface shapes and growth rates of gallium antimonide in a single-zone vertical Bridgman furnace. In: Journal of Crystal Growth, 154 (3-4). pp. 213-222.
Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (1995) Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures. In: Applied Physics Letters, 67 (7). pp. 1001-1003.
Balasubramanian, Sathya and Rao, Koteswara KSR and Balasubramanian, N and Kumar, Vikram (1995) Effect of hydrogenation and thermal annealing on the photoluminescence of p-InP. In: Journal of Applied Physics, 77 (10). pp. 5398-5405.
Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1995) Electrical characterization of surface defects in GaSb created by hydrogen plasma. In: Applied Physics Letters, 66 (15). pp. 1986-1988.
Iyer, Suman B and Harshavardhan, KS and Kumar, Vikram (1995) Buckling patterns in diamond-like carbon films. In: Thin Solid Films, 256 (1-2). pp. 94-100.
Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1995) Optical and electrical properties of hydrogen-passivated gallium antimonide. In: Physical Review B: Condensed Matter, 51 (4). pp. 2153-2158.
Balasubramanian, Sathya and Balasubramanian, N and Kumar, Vikram (1995) Reactivation kinetics of acceptors in hydrogenated InP during unbiased annealing. In: Physical Review B: Condensed Matter, 51 (3). pp. 1536-1540.
Balasubramanian, Sathya and Kumar, Vikram (1995) Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy. In: MRS Proceedings, 378 .
Dutta, PS and Bhat, HL and Kumar, Vikram and Dieguez, E (1995) Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb. In: MRS Proceedings, 399 . p. 153.
Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1994) Experimental determination of melt-solid interface shapes and actual growth rates of gallium antimonide grown by vertical Bridgman method. In: Journal of Crystal Growth, 141 (3-4). pp. 476-478.
Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1994) Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface. In: Journal of Crystal Growth, 141 (1-2). pp. 44-50.
Ghosh, Subhasis and Kumar, Vikram (1994) A deep‐level spectroscopic technique for determining capture cross‐section activation energy of Si‐related DX centers in AlxGa1-xAs. In: Journal of Applied Physics, 75 (12). pp. 8243-8245.
Ghosh, Subhasis and Kumar, Vikram (1994) A deep-level spectroscopic technique for determining capture cross - section activation energy of Si-related DX centers in $Al_xGa_{1-x}As$. In: Journal of Applied Physics, 75 (12). pp. 8243-8245.
Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N and Premachandran, V (1994) Resistance switching in indium phosphide using hydrogen passivation of acceptors. In: Applied Physics Letters, 64 (17). pp. 2256-2257.
Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N (1994) Reduced phosphorus loss from InP surface during hydrogen plasma treatment. In: Applied Physics Letters, 64 (13). pp. 1696-1698.
Iyer, Suman B and Harshavardhan, KS and Kumar, Vikram (1993) Interfacial electrical properties of diamond-like carbon/gallium arsenide heterostructures. In: Diamond and Related Materials, 2 (12). pp. 1459-1463.
Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N (1993) Reverse-bias annealing kinetics of Mg-H complexes in InP. In: Journal of Applied Physics, 74 (7). pp. 4521-4526.
Ghosh, Subhasis and Kumar, Vikram (1992) Transient Photoconductivity In Si-doped $AI_{0.26}Ga_{0.74}As$. In: Solid State Communications, 83 (1). pp. 37-39.
Pandian, Velayuthan and Mohapatra, Yashowanta N and Kumar, Vikram (1991) Silver- and Gold-Related Deep Levels in Gallium Arsenide. In: Japanese Journal of Applied Physics, 30 (11A). 2815 -2818.
Iyer, Suman B and Kumar, Vikram and Harshavardhan, KS (1991) High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures. In: Solid-State Electronics, 34 (6). 535 -543.
Iyer, Suman B and Kumar, Vikram and Harshavardhan, KS (1989) Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures. In: Japanese Journal of Applied Physics, 28, Part-2 (5). L744-L746.
Balasubramanyam, N and Kumar, Vikram (1988) System effects in double‐channel gated‐integrator‐based deep‐level transient spectroscopy. In: Journal of Applied Physics, 64 (11). 6311 -6314.
Iyer, Suman B and Kumar, Vikram (1987) Comment on "Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon". In: Physical Review Letters, 59 (18). p. 2115.
Kumar, Vikram and Indusekhar, H (1987) Electrical properties of nickel-related deep levels in silicon. In: Journal of Applied Physics, 61 (4). pp. 1449-1455.
Balasubramanyam, N and Kumar, Vikram (1987) Pressure Dependence of Barrier Heights of Schottky Contacts on Silicon. In: Physica Status Solidi A: Applied Research, 101 (1). K29-K32.
Xavier, C Francis and Sevariraj, GA and Kumar, Vikram (1985) Theoretical Optimization of Metal Para-Normal Silicon Schottky-Barrier Solar-Cell. In: Pramana, 25 (5). pp. 587-596.
Chandra, Mohan M and Kumar, Vikram (1985) A DLTS technique for surface state capture cross-section measurement of MOS diodes. In: Applications of Surface Science, 22-23 (2). pp. 1004-1010.
Mohapatra, YN and Balasubramanyam, N and Kumar, Vikram (1985) Characterization of deep levels in semi-insulating gallium arsenide. In: Bulletin of Materials Science, 7 (1). pp. 57-61.
Indusekhar, H and Kumar, Vikram (1985) The photoionisation energy of the thermally induced $E_v$ +0.42 eV level in p-silicon. In: Journal of Physics C: Solid State Physics, 18 (26). pp. 5095-5098.
Iyer, Suman B and Nityananda, Rajaram and Kumar, Vikram (1984) Applicability of the van der Pauw-Hall measurement technique to implanted samples. In: Journal of applied physics, 55 (12). pp. 4450-4451.
Kalyanaraman, V and Chandra, Mohan M and Kumar, Vikram (1983) Deep levels related to ion-implanted tellurium in silicon. In: Journal of Applied Physics, 54 (11). pp. 6417-6420.
Dutta, PS and Rao, Koteswara KSR and Bhat, HL and Kumar, Vikram (1995) Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide. In: Journal of Applied Physics, 77 (9). 4825-4827 .
Pinjare, SL and Balasubramanyam, N and Kumar, Vikram (1989) Photoluminescence at 0.944 eV from heat-treated n-type silicon. In: Physica Status Solidi A, 113 (2). K261-K264.
Mohapatra, YN and Kumar, Vikram (1988) Determination of activation energy for thermal regeneration of EL2 from its metastable state by thermally stimulated photocurrent measurements. In: Journal of Applied Physics, 64 (2). pp. 956-958.
Narayanan, Sankara EM and Annamalai, S and Sarma, GH and Iyer, Suman B and Kumar, Vikram (1988) Neutralization of phosphorus in polycrystalline silicon by hydrogenation. In: Journal of Applied Physics, 63 (8). pp. 2867-2868.
