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Kumar, Vikram and Indusekhar, H (1987) Electrical properties of nickel-related deep levels in silicon. In: Journal of Applied Physics, 61 (4). pp. 1449-1455.
Indusekhar, H and Kumar, V (1986) Properties of iron related quenched-in levels in p-silicon. In: Physica Status Solidi A-Applied Research, 95 (1). 269 -278.
Indusekhar, H and Kumaran, V and Sengupta, D (1986) Investigation of Deep Defects Due to -Particle Irradiation in n-Silicon. In: Physica Status Solidi A, 93 (2). pp. 645-653.
Indusekhar, H and Kumar, Vikram (1985) The photoionisation energy of the thermally induced $E_v$ +0.42 eV level in p-silicon. In: Journal of Physics C: Solid State Physics, 18 (26). pp. 5095-5098.
Kumar, V and Indusekhar, H (1983) New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductors. In: Electronics Letters, 19 (7). pp. 271-272.
