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Conference Paper

Krupanidhi, SB and Hudait, MK (2000) Interface characterization of GaAs/Ge heterostructure grown by metalorganic vapor phase epitaxy. In: Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 Dec. 1999, New Delhi, India, pp. 171-178.

Krupanidhi, SB and Hudait, MK and Modak, P and Hardikar, S and Kumar, Vikram and Agarwal, SK (1998) MOCVD epitaxy of GaAs/Ge heterostructures. In: International workshop on the Physics of Semiconductor Devices: IWPSD97, vol.1, 16-20 Dec. 1997, Delhi, India, pp. 262-270.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD. In: International workshop on the physics of semiconductor devices: IWPSD 97, Vol. 3316, 16-20 Dec. 1997, Delhi, India, pp. 312-316.

Modak, P and Hudait, MK and Krupanidhi, SB (1996) Epitaxial GaAs layers by MOCVD process: Growth and characterization. In: 8th International Workshop on Physics of Semiconductor Devices, DEC 11-16, 1995, NEW DELHI, INDIA.

Journal Article

Hudait, MK and Krupanidhi, SB (2002) Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells. In: Defect and Diffusion Forum, 210-2 . pp. 15-20.

Hudait, MK and Krupanidhi, SB (2001) Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates. In: Materials Science and Engineering B, 87 (2). pp. 141-147.

Hudait, MK and Krupanidhi, SB (2001) Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy. In: Journal of Applied Physics, 89 (11). pp. 5972-9.

Hudait, MK and Venkateswarlu, P and Krupanidhi, SB (2001) Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. In: Solid-State Electronics, 45 (1). pp. 133-141.

Hudait, MK and Modak, P and Krupanidhi, SB (1999) Si incorporation and Burstein-Moss shift in n-type GaAs. In: Materials Science and Engineering B, 60 (1). pp. 1-11.

Hardikar, S and Hudait, MK and Modak, P and Krupanidhi, SB and Padha, N (1999) Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures. In: Applied Physics A: Materials Science & Processing, 68 (1). pp. 49-55.

Hudait, MK and Modak, P and Rao, KSRK and Krupanidhi, SB (1998) Low temperature photoluminescence properties of Zn-doped GaAs. In: Materials Science and Engineering B, 57 (1). pp. 62-70.

Hudait, MK and Modak, P and Hardikar, S and Rao, KSRK and Krupanidhi, SB (1998) Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates. In: Materials Science and Engineering B, 55 (1-2). pp. 53-67.

Hudait, MK and Modak, P and Hardikar, S and Krupanidhi, SB (1998) Photoluminescence studies on Si-doped GaAs/Ge. In: Journal of Applied Physics, 83 (8). pp. 4454-4461.