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Conference Proceedings

Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Shrivastava, Mayank (2018) Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, CA, USA.

Shankar, Bhawani and Soni, Ankit and Gupta, Sayak Dutta and Sengupta, R and Khand, H and Mohan, N and Raghavan, Srinivasan and Shrivastava, Mayank (2018) On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs. In: 2018 IEEE International Reliability Physics Symposium, IRPS 2018; Burlingame; United States; 11 March, 11-15 March 2018, Burlingame, CA, USA.

Shankar, Bhawani and Sengupta, Rudrarup and Gupta, Sayak Dutta and Soni, Ankit and Mohan, Nagaboopathy and Bhat, Navakanta and Raghavan, Srinivasan and Shrivastava, Mayank (2017) On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.

Conference Paper

Gupta, Sayak Dutta and Krishna, JBM and Ray, Mallar (2017) Thermoelectric properties of Si Nanoparticle-Polyaniline composites. In: 1st International Conference on Electronics, Materials Engineering and Nano-Technology, IEMENTech 2017, 28-29 April 2017, Kolkata, India, pp. 1-4.

Journal Article

Shankar, Bhawani and Gupta, Sayak Dutta and Soni, Ankit and Raghavan, Srinivasan and Shrivastava, Mayank (2019) ESD Behavior of AlGaN/GaN Schottky Diodes. In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 19 (2). pp. 437-444.

Gupta, Sayak Dutta and Soni, Ankit and Joshi, Vipin and Kumar, Jeevesh and Sengupta, Rudrarup and Khand, Heena and Shankar, Bhawani and Mohan, Nagaboopathy and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2019) Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (6). pp. 2544-2550.