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Remesh, Nayana and Kumar, Sandeep and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE .
Remesh, Nayana and Mohan, Nagaboopathy and Kumar, Sandeep and Prabhu, Prabhu and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (1). pp. 613-618.
Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.