|
 | Up a level |
Goswami, J and Ananthakrishna, G and Shivashankar, SA (1997) Monte Carlo simulation of nucleation and growth of thin films. In: India-Japan Seminar on New Materials, 21-22 Oct. 1996, Hyderbad, India, pp. 823-843.
Goswami, J and Shivashankar, SA and Raghunathan, L and Devi, A and Ramanathan, KV (1994) Comparison of growth and microstructure of copper films deposited from different Cu(II) precursors. In: Advanced Metallization for Devices and Circuits—Science Technology and Manufacturing III, 4-8 April 1994, Pittsburgh, PA, USA, pp. 691-696.
Bazavov, A and Bollweg, D and Ding, HT and Enns, P and Goswami, J and Hegde, P and Kaczmarek, O and Karsch, F and Larsen, R and Mukherjee, S and Ohno, H and Petreczky, P and Schmidt, C and Sharma, S and Steinbrecher, P (2020) Skewness, kurtosis, and the fifth and sixth order cumulants of net baryon-number distributions from lattice QCD confront high-statistics STAR data. In: Physical Review D, 101 (7).
Devi, Anjana and Goswami, J and Lakshmi, R and Shivashankar, SA and Chandrasekaran, S (1998) A novel Cu(II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition. In: Journal of Materials Research, 13 (3). pp. 687-692.
Goswami, J and Shivashankar, SA and Anathakrishna, G (1997) Effects of reaction kinetics on the microstructure of chemical vapour deposited copper films: experiment and simulation. In: Thin Solid Films, 305 (1-2). pp. 52-60.
Patnaik, S and Row, TNG and Raghunathan, L and Devi, A and Goswami, J and Shivashankar, SA and Chandrasekaran, S and Robinson, WT (1996) Low-temperature structure of two copper-based precursors for MOCVD: Aquabis(tert-butyl acetoacetato)copper(II) and Bis(dipivaloylmethanido)copper(II). In: Acta Crystallographica Section C, 52 (part 4). pp. 891-894.
Goswami, J and Raghunathan, L and Devi, A and Shivashankar, SA and Chandrasekaran, S (1996) Chemical vapour deposition of thin copper films using a new metalorganic precursor. In: Journal of Materials Science Letters, 15 (7). pp. 573-575.
