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Shankar, B and Soni, A and Dutta Gupta, S and Shikha, S and Singh, S and Raghavan, S and Shrivastava, M (2019) Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress. In: 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, 1 December 2018- 5 December 2018, San Francisco, 34.6.1-34.6.4.
Dutta Gupta, S and Joshi, V and Shankar, B and Shikha, S and Raghavan, S and Shrivastava, M (2019) UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities. In: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, 31 March 2019 - 4 April 2019, Monterey.
Dutta Gupta, S and Joshi, V and Chaudhuri, RR and Shrivastava, M (2022) Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control over the 2-DEG. In: IEEE Transactions on Electron Devices, 69 (3). pp. 1608-1611.
Joshi, V and Dutta Gupta, S and Roy Chaudhuri, R and Shrivastava, M (2021) Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i. In: IEEE Transactions on Electron Devices, 68 (1). pp. 72-79.
Dutta Gupta, S and Joshi, V and Roy Chaudhuri, R and Shrivastava, M (2021) Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors. In: Journal of Applied Physics, 130 (1).
Shankar, B and Shikha, S and Singh, A and Kumar, J and Soni, A and Dutta Gupta, S and Raghavan, S and Shrivastava, M (2020) Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs under Fast Cyclic Transient Stress. In: IEEE Transactions on Device and Materials Reliability, 20 (3). pp. 562-569.
