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Journal Article

Bardhan, Abheek and Mohan, Nagaboopathy and Chandrasekar, Hareesh and Ghosh, Priyadarshini and Rao, D V Sridhara and Raghavan, Srinivasan (2018) The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. In: JOURNAL OF APPLIED PHYSICS, 123 (16).

Bardhan, Abheek and Mohan, Nagaboopathy and Soman, Rohith and Manikant, * and Raghavan, Srinivasan (2016) Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111). In: IETE TECHNICAL REVIEW, 33 (1, SI). pp. 82-87.

Chandrasekar, Hareesh and Mohan, Nagaboopathy and Bardhan, Abheek and Bhat, KN and Bhat, Navakanta and Ravishankar, N and Raghavan, Srinivasan (2013) An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si. In: Applied Physics Letters, 103 (21). 211902_1-211902_.

This list was generated on Fri Apr 19 10:35:09 2024 IST.