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Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Dixit, VK (2004) Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis. In: Proceedings of the 11th International Conference on Narrow Gap Semiconductors, JUN 16-20, 2003, Buffalo, New York.
Bar, Tapas and Choudhary, Sujeet Kumar and Ashraf, Md. Arsalan and Sujith, K S and Puri, Sanjay and Raj, Satyabrata and Bansal, Bhavtosh (2018) Kinetic Spinodal Instabilities in the Mott Transition in V2O3: Evidence from Hysteresis Scaling and Dissipative Phase Ordering. In: PHYSICAL REVIEW LETTERS, 121 (4).
Bansal, Bhavtosh and Ghosh, Rituparna and Venkataraman, V (2013) Scattering of carriers by charged dislocations in semiconductors. In: Journal of Applied Physics, 113 (16). 163705_1-163705_6.
Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2007) Alloying induced degradation of the absorption edge of $InAs_xSb_{1-x}$. In: Applied Physics Letters, 90 (10). pp. 101905-3.
Bansal, Bhavtosh and Venkataraman, V and Dixit, VK and Bhat, HL (2007) Alloying induced degradation of the absorption edge of InAsxSb1-x. In: Applied Physics Letters, 90 (10). p. 101905.
Nagapriya, KS and Raychaudhuri, AK and Bansal, Bhavtosh and Venkataraman, V and Parashar, Sachin and Rao, CNR (2005) Collapse of the charge-ordering state at high magnetic fields in the rare-earth manganite $Pr_{0.63}Ca_{0.37}MnO_3$. In: Physical Review B: Condensed Matter and Materials Physics, 71 (2). 024426/1-024426/6.
Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2004) Transport, optical and magnetotransport properties of hetero-epitaxial In$As_xSb_{1-x}/GaAs(x\leq0.06)$ and bulk In$As_xSb_{1-x} (x\leq0.05)$ crystals: experiment and theoretical analysis. In: Physica E: Low-dimensional Systems and Nanostructures, 20 (3-4). pp. 272-277.
Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Dixit, VK (2003) Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals. In: Applied Physics Letters, 82 (26). pp. 4720-4722.
Bansal, Bhavtosh and Dixit, VK and Venkataraman, V and Bhat, HL (2003) Temperature dependence of the energy gap and free carrier absorption in bulk $InAs_0_._0_5Sb_0_._9_5$ single crystals. In: Applied Physics Letters, 82 (26). pp. 4720-4722.
Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN (2002) Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1-x) grown by rotatory Bridgman method. In: Applied Physics Letters, 81 (9). pp. 1630-1632.
Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN (2002) Structural, optical, and electrical properties of bulk single crystals of InAsx Sb(1–x) grown by rotatory Bridgman method. In: Applied Physics Letters, 81 (9). pp. 1630-1632.
Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN and Chandrasekharan, KS and Arora, BM (2002) High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy. In: Applied Physics Letters, 80 (12). pp. 2102-2104.
Bansal, Bhavtosh and Venkataraman, V (2005) Magnetic field induced band depopulation in intrinsic InSb: A revisit. [Preprint]
Bansal, Bhavtosh and Venkataraman, V (2004) Scattering of Carriers by Charged Dislocations in Semiconductors. [Preprint]
