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Baby, R and Mandal, M and Roy, SK and Bardhan, A and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing. In: Microelectronic Engineering, 282 .
Baby, R and Roy, SK and Tripathy, S and Muralidharan, R and Basu, K and Raghavan, S and Nath, DN (2023) Fabrication and Switching Performance of 8 A�500 V D-Mode GaN MISHEMTs. In: Physica Status Solidi (A) Applications and Materials Science .
Baby, R and Venugopalrao, A and Chandrasekar, H and Raghavan, S and Rangarajan, M and Nath, DN (2022) Study of the impact of interface traps associated with SiN Xpassivation on AlGaN/GaN MIS-HEMTs. In: Semiconductor Science and Technology, 37 (3).
