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Kumar, Sandeep and Remesh, Nayana and Dolmanan, S B and Tripathy, S and Raghavan, S and Muralidharan, R and Nath, Digbijoy N (2017) Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si. In: SOLID-STATE ELECTRONICS, 137 . pp. 117-122.

Ghosh, Ram Krishna and Bhattacharya, Sitangshu and Mahapatra, Santanu (2013) k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire. In: SOLID-STATE ELECTRONICS, 80 . pp. 124-134.

This list was generated on Thu Apr 18 16:00:51 2024 IST.