Up a level |
Saha, S and Yaddanapudi, K and Muraleedharan, K and Raghavan, S and Banerjee, D (2018) GaN Growth Process by MOCVD Revisited: TEM Study of Microstructural Evolution Presented. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
Saha, S and Yaddanapudi, K and Channagiri, S and Muraleedharan, K and Banerjee, D (2022) N-polar GaN evolution on nominally on-axis c-plane sapphire by MOCVD Part-II: Microstructural investigation. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology .