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Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Chandrasekar, Hareesh and Mohan, Nagaboopathy and Mohta, Neha and Ramesh, Nayana and Prabhu, Shreesha and Kulkarni, Abhay and Nath, Digbijoy and Muralidharan, R and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakant and Shrivastava, Mayank (2017) Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.
Chandrasekar, Hareesh and Kumar, Sandeep and Ganapathi, Kolla Lakshmi and Prabhu, Shreesha and Bin Dolmanan, Surani and Tripathy, Sudhiranjan and Raghavan, Srinivasan and Bhat, KN and Mohan, Sangeneni and Muralidharan, Rangarajan and Bhat, Navakanta and Nath, Digbijoy N (2018) Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (9). pp. 3711-3718.