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Munshi, MA and Mir, MA and Malik, R and Joshi, V and Chaudhuri, RR and Khan, Z and Shrivastava, M (2023) Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs. In: UNSPECIFIED.
Mir, MA and Thakare, A and Munshi, MA and Avinash, V and Wani, S and Khan, Z and Chaudhuri, R and Karthik, S and Malik, R and Joshi, V and Shrivastava, M (2024) On the Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium, IRPS 2024, 14 April 2024through 18 April 2024, Grapevine.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2023) Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.
Malik, RR and Shaji, AN and Jayshree, ; and Khan, Z and Bhattacharya, M and Munshi, MA and Chaudhuri, RR and Joshi, V and Shrivastava, M (2023) Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs. In: UNSPECIFIED.
Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2024) Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 71 (9). pp. 5251-5257.
Munshi, MA and Mir, MA and Joshi, V and Chaudhuri, RR and Malik, R and Shrivastava, M (2024) Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer. In: IEEE Transactions on Electron Devices .
